Abstract:Tunnel field-effect transistors (TFETs) are promising for use in ultralow-power applications owing to their distinct band-to-band tunneling operation. However, the ON-state current of these Si-based tunnel devices is considerably lower than that of MOSFETs. Furthermore, a high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> dielectric is used as a gate insulator or spacer to increase the TFET’s tunneling field strength; this usually causes fringe-induced barrier lowering and deterioration of its subthreshold characteristics. Here, in this paper, a gate field plate TFET (GFP-TFET) structure is proposed to enhance the driving current and suppress the current kink induced by fringe-induced barrier lowering. A detailed investigation into the effects of a gate field plate on TFET performance was conducted with the help of extensive device simulations. The gate oxide and gate field plate oxide could be used to tailor the electric field lines to increase the electric field in the tunnel junction. Meanwhile, the fringing field concentration was reduced by using a metal with a relatively high work function as the field plate electrode. Thus, the electric field strength decreased near the gate edge and increased in the channel. The GFP-TFET exhibited high driving current and low subthreshold characteristics at the cost of a reduction in cutoff frequency. A GFP-TFET structure with optimized parameters had a <inline-formula> <tex-math notation="LaTeX">$10^{3}\times $ </tex-math></inline-formula> higher ON-state current compared with a normal silicon tunnel FET. The minimum subthreshold swing decreased from 146.3 to 21.4 mV/dec and the ON/OFF current ratio increased from <inline-formula> <tex-math notation="LaTeX">$10^{7}$ </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">$10^{13}$ </tex-math></inline-formula> compared with a normal TFET.

A novel Ge based overlapping gate dopingless tunnel FET with high performance

Germanium-source L-shaped TFET with dual in-line tunneling junction

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

A SiGe-Source Doping-Less Double-Gate Tunnel FET: Design and Analysis Based on Charge Plasma Technique with Enhanced Performance

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Charge Plasma Dopingless Device: Boosting High-Frequency Performance with Germanium and Hetero Dielectric Gate

Design Optimization of a Silicon-Germanium Heterojunction Negative Capacitance Gate-All-Around Tunneling Field Effect Transistor based on a Simulation Study

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

The Application of Gate-Drain Underlap Architecture in TFET-based Inverters

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Design and Performance Optimization of Dopingless Vertical Nanowire TFET Using Gate Stacking Technique

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Fabrication and Characterization of a Novel Si Line Tunneling TFET with High Drive Current

Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET

Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance