Abstract:We propose three innovative SOI Tunnel FET architectures to solve the recurrent issue of low ION and degraded subthreshold slope measured on TFETs. These are evaluated and compared with a standard TFET structure (with lateral tunneling) using the Sentaurus TCAD tool. Extending the source (anode) at the bottom of the body region generates vertical band-to-band tunneling. Moreover, reducing the vertical distance between the extension and the gate oxide (L-rt) yields a very steep slope and higher ION compared to a device with only lateral tunneling, but only for gate lengths longer than 100 nm. Using an ultrahigh boron dopant concentration (10(21) cm(-3)) thin layer at the bottom for extremely small body thickness (T-Si < 7 nm), increases ION even for small gate lengths (L-G < 100 nm). The implementation of an embedded tip in the source enhances the maximum electric field at the source/channel junction, but the impact on the performance is limited because the tunneling area is not increased. Therefore, this architecture provides a performance similar to a standard TFET. TCAD simulations using SiGe with different germanium concentrations (30% and 50%) and pure germanium, instead of silicon, show an increase of the interband tunneling current when using an ultrahigh dopant concentration thin boron layer for small gate lengths (L-G < 50 nm). The reduction of the tunneling current using a relatively thick channel (11-7 nm) can be compensated by using a higher germanium concentration to reduce the energy bandgap. However, this will increase the density of defects causing a TAT tunneling instead of interband tunneling, jeopardizing the possibility of achieving a subthreshold swing below 60 mV/dec.

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Germanium-source L-shaped TFET with dual in-line tunneling junction

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain

Design of U-Shape Channel Tunnel FETs with SiGe Source Regions

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

Fabrication and Characterization of a Novel Si Line Tunneling TFET with High Drive Current

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

A novel Ge based overlapping gate dopingless tunnel FET with high performance

High performance tunnel field-effect transistor by gate and source engineering.

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Ultra-Thin SiGe in the Source Modifies Performance of Thin-Film Tunneling FET

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.

New Prospects on High On-Current and Steep Subthreshold Slope for Innovative Tunnel FET Architectures