Abstract:A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and the effects of different device parameters are analyzed in detail. Owing to the gate field being parallel to the tunneling interface, the gate control is enhanced, and a better electrical performance is obtained. Moreover, different from a conventional TFET, in which the effective tunneling area and current can hardly be modulated by the gate length, in our proposed device, the effective tunneling area and current can be adjusted depending on the actual requirements of circuit design, which increases the flexibility of TFET-based circuit design. In addition, the device architecture can also be extended to other materials, such as Ge/Si and GaSb/InAs, and thus be used for both n-type and p-type devices. The results show that the complementary digital inverter structure with InAs/Si as the n-type TFET and Ge/Si as the p-type TFET would be helpful for future ultralow power applications. This proposed structure without any complicated fabrication steps shows better compatibility with CMOS technology compared to other TFETs with heterojunction and structural innovations presented in theoretical works.

A physical current model for junction-modulated tunneling field-effect transistor with steep switching behavior

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

A Physical Current Model for Multi-Finger Gate Tunneling FET with Schottky Junction

A Physical Current Model for Self-Depleted T-gate Schottky Barrier Tunneling FET with Low SS and High I<inf>ON</inf>/I<inf>OFF</inf>

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Analytical Current Model of Tunneling Field-Effect Transistor Considering the Impacts of Both Gate and Drain Voltages on Tunneling.

A Tunneling Field Effect Transistor Model Combining Interband Tunneling with Channel Transport

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

A Non-Quasi-Static Model for Tunneling FETs Based on the Relaxation Time Approximation

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.

A Simulation Study of Vertical Tunnel Field Effect Transistors

A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications