Abstract:The combination of the InAs/GaSb heterojunction and the line-tunneling mechanism is considered as one of the most promising approaches to simultaneously obtain high ON-state current ( I ON ) and low subthreshold swing (SS) in tunneling field effect transistors (TFETs). However, in an InAs/GaSb line-tunneling field effect transistor (LTFET), the isolation between the source and the drain is a big issue. The leakage current path could lead to complete loss of the OFF-state characteristics in extreme cases. The “cantilever” or “airbridge” structure is usually introduced to cutoff the leakage path. However, it also induces serious reliability problems and brings additional process complexity. In this article, an N+ doped buried drain is first proposed to form a reverse biased p-n junction with the P + source and effectively cuts the leakage current path off. The InAs / GaSb LTFETs with this buried drain technique exhibits I ON / I OFF > 10 7 and SS <; 60 mV / dec for five decades of current. Besides the excellent performance, the buried drain technique keeps the device planar and brings no additional fabrication complexity, which is of great significance for future experimental investigation and the low power applications.

A Physical Current Model for Self-Depleted T-gate Schottky Barrier Tunneling FET with Low SS and High I<inf>ON</inf>/I<inf>OFF</inf>

A Physical Current Model for Multi-Finger Gate Tunneling FET with Schottky Junction

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

A physical current model for junction-modulated tunneling field-effect transistor with steep switching behavior

A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

A Tunneling Field Effect Transistor Model Combining Interband Tunneling with Channel Transport

An Empirical Model for Static I–V Characteristics of Double Gate Tunneling Field Effect Transistor

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

An On-State Analytical Model for the Trench Insulated Gate Bipolar Transistor (TIGBT)

A Surface Potential Based Full-Region Current Model for Doping Segregated TFETs

Analytical Current Model of Tunneling Field-Effect Transistor Considering the Impacts of Both Gate and Drain Voltages on Tunneling.

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

High performance tunnel field-effect transistor by gate and source engineering.