Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Sofia Aslanidou, Alberto García-García, Gemma Rius, Philippe Godignon Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

Systhesis and Devices of Graphene

Fabrication and Characterization of Graphene Derived from SiC

(Invited) Graphene FETs: Promises and Challenges

Graphene on Silicon Hybrid Field-Effect Transistors

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Optimizing the fabrication process for high performance graphene field effect transistors.

Computational Study of Graphene-Based Vertical Field Effect Transistor

Substrate engineering by hexagonal boron nitride/SiO2 for hysteresis-free graphene FETs and large-scale graphene p-n junctions.

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

A Graphene Field-Effect Device

Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.

Tunneling in Graphene SymFETs

Fabrication Technique and Transportation Properties of WS2/graphene Heterojunction

N‐type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Graphene-enhanced van der Waals contacts between three-dimensional metals and two-dimensional semiconductors