Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Sofia Aslanidou, Alberto García-García, Gemma Rius, Philippe Godignon Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

A Graphene Field-Effect Device

Mobility in Graphene Double Gate Field Effect Transistors

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

Top‐ and Side‐gated Epitaxial Graphene Field Effect Transistors

Systhesis and Devices of Graphene

Top-gate Engineering of Field-Effect Transistors Based on Single Layers of MoS2 and Graphene

Graphene FETs with Combined Structure and Transparent Top

Fabrication and Characterization of Graphene Derived from SiC

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors

Field-Effect Transistors Based on Single-Layer Graphene and Graphene-Derived Materials

Interface-Dependent Effective Mobility in Graphene Field-Effect Transistors

A Field-Effect-Transistor from Graphite: No Effect of Low Gate Fields

Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

Novel Graphene Field Effect Transistor with Bntm Ferroelectric Gate

Top-Gated Graphene Field-Effect-Transistors Formed by Decomposition of Sic

Optimizing the fabrication process for high performance graphene field effect transistors.

(Invited) Graphene FETs: Promises and Challenges

An efficient GFET structure

Graphene on Silicon Hybrid Field-Effect Transistors

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene