Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Sofia Aslanidou, Alberto García-García, Gemma Rius, Philippe Godignon Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

(Invited) Graphene FETs: Promises and Challenges

Improvement of Thermal and Mechanical Reliability of a LDMOS FET Using Graphene

Graphene Transistors: Promises and Challenges

Graphene's Potential in Electronic Devices: Characteristics, Applications, Challenges, And Solutions

Systhesis and Devices of Graphene

Graphene Field Effect Transistors: A Review

Optimizing the fabrication process for high performance graphene field effect transistors.

Top‐ and Side‐gated Epitaxial Graphene Field Effect Transistors

Graphene Applications in Electronic and Optoelectronic Devices and Circuits

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Recent Development in Analytical Model for Graphene Field Effect Transistors for RF Circuit Applications

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices

Graphene review: An emerging RF technology

Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Application of Graphene within Optoelectronic Devices and Transistors

Advances in MoS 2 -Based Field Effect Transistors (Fets)

Computational Study of Graphene-Based Vertical Field Effect Transistor

ChemInform Abstract: Graphene Field‐Effect Transistors: Electrochemical Gating, Interfacial Capacitance, and Biosensing Applications

Graphene Electronics: Materials, Devices, and Circuits