Abstract:Two-dimensional (2D) materials with the atomically thin thickness have attracted great interest in the postMoore's Law era because of their tremendous potential to continue transistor downscaling and offered advances in device performance at the atomic limit. However, the metal-semi-conductor contact is the bottleneck in field-effect transistors (FETs) integrating 2D semiconductors as channel materials. A robust and tunable doping method at the source and drain region of 2D transistors to minimize the contact resistance is highly sought after. Here we report a stable carrier doping method via the mild covalent grafting of maleimides on the surface of 2D transition metal dichalcogenides. The chemisorbed interaction contributes to the efficient carrier doping without degrading the high-performance carrier transport. Density functional theory results further illustrate that the molecular functionalization leads to the mild hybridization and the negligible impact on the conduction bands of monolayer MoS2, avoiding the random scattering from the dopants. Differently from reported molecular treatments, our strategy displays high thermal stability (above 300 degrees C) and it is compatible with micro/nano processing technology. The contact resistance of MoS2 FETs can be greatly reduced by similar to 12 times after molecular functionalization. The Schottky barrier of 44 meV is achieved on monolayer MoS2 FETs, demonstrating efficient charge injection between metal and 2D semiconductor. The mild covalent functionalization of molecules on 2D semiconductors represents a powerful strategy to perform the carrier doping and the device optimization.

Advances in MoS 2 -Based Field Effect Transistors (Fets)

Advances in MoS2-Based Field Effect Transistors (FETs)

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors

Advances in atomic layer deposited high-κ inorganic materials for gate dielectrics engineering of two-dimensional MoS2 field effect transistors

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid-Structure.

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Field-Effect Transistors Based on Two-Dimensional Materials for Logic Applications

Quantum-mechanical effect in atomically thin MoS2 FET

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Controlled Growth of Bilayer-MoS2 Films and MoS2-Based Field-Effect Transistor (FET) Performance Optimization

Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

Realizing an Omega-Shaped Gate MoS2 Field-Effect Transistor Based on a SiO2/MoS2 Core-Shell Heterostructure.

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.