Abstract:As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.

Field-Effect Transistors Based on Two-Dimensional Materials for Logic Applications

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors

Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Advances in MoS 2 -Based Field Effect Transistors (Fets)

Field-Effect Transistors based on 2-D Materials: a Modeling Perspective

Advances in MoS2-Based Field Effect Transistors (FETs)

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Analog and Logic Circuits Fabricated on a Wafer-Scale Two-Dimensional Semiconductor

Field-Effect Transistors Based on Two-dimensional Materials (Invited)

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

Two-Dimensional Pnictogen for Field-Effect Transistors

High-performance Two-Dimensional Transistors and Circuits

Electronics Based on Two-Dimensional Materials: Status and Outlook

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2-BN-Graphene Van Der Waals Heterostructures.

Low-dimensional materials-based field-effect transistors

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors (Adv. Mater. 48/2022)