Abstract:The scaling of bulk Si-based transistors has reached its limits, while novel architectures such as FinFETs and GAAFETs face challenges in sub-10 nm nodes due to complex fabrication processes and severe drain-induced barrier lowering (DIBL) effects. An effective strategy to avoid short-channel effects (SCEs) is the integration of low-dimensional materials into novel device architectures, leveraging the coupling between multiple gates to achieve efficient electrostatic control of the channel. We employed TCAD simulations to model multi-gate FETs based on various dimensional systems and comprehensively investigated electric fields, potentials, current densities, and electron densities within the devices. Through continuous parameter scaling and extracting the sub-threshold swing (SS) and DIBL from the electrical outputs, we offered optimal MoS2 layer numbers and single-walled carbon nanotube (SWCNT) diameters, as well as designed structures for multi-gate FETs based on monolayer MoS2, identifying dual-gate transistors as suitable for high-speed switching applications. Comparing the switching performance of two device types at the same node revealed CNT's advantages as a channel material in mitigating SCEs at sub-3 nm nodes. We validated the performance enhancement of 2D materials in the novel device architecture and reduced the complexity of the related experimental processes. Consequently, our research provides crucial insights for designing next-generation high-performance transistors based on low-dimensional materials at the scaling limit.

Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials

Field-Effect Transistors Based on Two-Dimensional Materials for Logic Applications

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Advances in MoS 2 -Based Field Effect Transistors (Fets)

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors

Two-Dimensional Pnictogen for Field-Effect Transistors

Advances in MoS2-Based Field Effect Transistors (FETs)

Sub-5 Nm Monolayer Black Phosphorene Tunneling Transistors.

Field Effect Transistors Based on in Situ Fabricated Graphene Scaffold–ZrO2 Nanofilms

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2-BN-Graphene Van Der Waals Heterostructures.

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Enhanced Electrical Properties Of Lithography-Free Fabricated Mos2 Field Effect Transistors With Chromium Contacts

MoS2/graphene Lateral Heterostructure Field Effect Transistors.

2D Materials As Semiconducting Gate for Field-Effect Transistors with Inherent Over-Voltage Protection and Boosted ON-current

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Low-dimensional materials-based field-effect transistors

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Carbon nanotube transistors with graphene oxide films as gate dielectrics

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS 2 –BN–Graphene van der Waals Heterostructures