Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Sofia Aslanidou, Alberto García-García, Gemma Rius, Philippe Godignon Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

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Field-effect transistors based on single graphene oxide nanoribbon from longitude-unzipped carbon nanotubes

Nanofabrication of graphene field-effect transistors by thermal scanning probe lithography

2D Materials As Semiconducting Gate for Field-Effect Transistors with Inherent Over-Voltage Protection and Boosted ON-current

Carbon nanotube transistors with graphene oxide films as gate dielectrics

Flexible field-effect transistors with a high on/off current ratio based on large-area single-crystal graphene

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

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Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

Scalable Fabrication of Ambipolar Transistors and Radio-Frequency Circuits Using Aligned Carbon Nanotube Arrays.

Performance Enhancement of ZITO Thin Film Transistors via Graphene Bridge Layer by Sol-Gel Combustion Process.

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics