Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics.

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

High-Kappa Oxide Nanoribbons As Gate Dielectrics For High Mobility Top-Gated Graphene Transistors

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Graphene Nanoribbons Grown in Hbn Stacks for High-Performance Electronics

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Atomically Precise Graphene Nanoribbon Transistors with Long-Term Stability and Reliability

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

Electronic Transport Properties of Top-Gated Epitaxial-Graphene Nanoribbon Field-Effect Transistors on Sic Wafers

Bottom-up Graphene Nanoribbon Field-Effect Transistors

Graphene Nanoribbons from Tetraphenylethene-Based Polymeric Precursor: Chemical Synthesis and Application in Thin-Film Field-Effect Transistor

High-speed graphene transistors with a self-aligned nanowire gate

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Realization of Graphene Field-Effect Transistor with High-Κ HCa2Nb3O10 Nanoflake As Top-Gate Dielectric

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

High-performance CdS:P Nanoribbon Field-Effect Transistors Constructed with High-Κ Dielectric and Top-Gate Geometry

Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches

Controlled Preparation and Device Application of Sub-5 Nm Graphene Nanoribbons and Graphene Nanoribbon/Carbon Nanotube Intramolecular Heterostructures