Abstract:<p>Graphene nanoribbons (GNRs) are an emerging material for future nanoelectronic applications. Because GNR fabrication technology is still in an early stage, modelling of GNR field-effect transistors (GNRFETs) is significant for evaluating the performance metrics of these devices. In this study, the charge transport properties of double-gate monolayer GNRFETs with various channel widths and lengths and doped contacts are investigated. The Hamiltonian matrix of the device is derived using the nearest-neighbour tight-binding method. The self-consistent solutions of the Poisson and Schrödinger equations are obtained within a recursive non-equilibrium Green's function formalism using the successive over-relaxation method to reduce the time required for the simulation. The effects of channel length and width of the device on the electronic transport properties such as the total density of states, transmission coefficient, energy-resolved current spectrum, and current–voltage characteristics are investigated. The performance metrics of the device, including the subthreshold swing, drain-induced barrier lowering (DIBL), threshold voltage, and on/off current ratio, are computed. It is found that for narrower and longer devices, the subthreshold swing and DIBL decrease, whereas the on/off current ratio increases. In addition, when the width index is in the 3p+1 family, the device exhibits better switching performance. 7- armchair GNRFET at 7 nm exhibits an outstanding subthreshold swing of ∼67 mV/dec and a DIBL of ∼54 mV/V. Thus, the narrower and longer device is less affected by short-channel effects, and the lower leakage current during the off state enables better switching performance, making it a potential candidate for future nanoelectronic applications in low-power design.</p>

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Design of bilayer graphene nanoribbon tunnel field effect transistor

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Room-Temperature All-Semiconducting Sub-10-Nm Graphene Nanoribbon Field-Effect Transistors

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Negative Differential Resistance in Graphene Nanoribbon Superlattice Field-Effect Transistors

Negative Differential Resistance and Rectifying Performance Induced by Doped Graphene Nanoribbons P – N Device

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

Graphene Nanoribbons from Tetraphenylethene-Based Polymeric Precursor: Chemical Synthesis and Application in Thin-Film Field-Effect Transistor

Bottom-up Graphene Nanoribbon Field-Effect Transistors

Fabrication and electrical properties of graphene nanoribbons

Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

Three-terminal graphene negative differential resistance devices.

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method