Abstract:<p>Graphene nanoribbons (GNRs) are an emerging material for future nanoelectronic applications. Because GNR fabrication technology is still in an early stage, modelling of GNR field-effect transistors (GNRFETs) is significant for evaluating the performance metrics of these devices. In this study, the charge transport properties of double-gate monolayer GNRFETs with various channel widths and lengths and doped contacts are investigated. The Hamiltonian matrix of the device is derived using the nearest-neighbour tight-binding method. The self-consistent solutions of the Poisson and Schrödinger equations are obtained within a recursive non-equilibrium Green's function formalism using the successive over-relaxation method to reduce the time required for the simulation. The effects of channel length and width of the device on the electronic transport properties such as the total density of states, transmission coefficient, energy-resolved current spectrum, and current–voltage characteristics are investigated. The performance metrics of the device, including the subthreshold swing, drain-induced barrier lowering (DIBL), threshold voltage, and on/off current ratio, are computed. It is found that for narrower and longer devices, the subthreshold swing and DIBL decrease, whereas the on/off current ratio increases. In addition, when the width index is in the 3p+1 family, the device exhibits better switching performance. 7- armchair GNRFET at 7 nm exhibits an outstanding subthreshold swing of ∼67 mV/dec and a DIBL of ∼54 mV/V. Thus, the narrower and longer device is less affected by short-channel effects, and the lower leakage current during the off state enables better switching performance, making it a potential candidate for future nanoelectronic applications in low-power design.</p>

Room-Temperature All-Semiconducting Sub-10-Nm Graphene Nanoribbon Field-Effect Transistors

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Design of bilayer graphene nanoribbon tunnel field effect transistor

Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications

Fabrication and electrical properties of graphene nanoribbons

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors

Atomically Precise Graphene Nanoribbon Transistors with Long-Term Stability and Reliability

Graphene Nanoribbons from Tetraphenylethene-Based Polymeric Precursor: Chemical Synthesis and Application in Thin-Film Field-Effect Transistor

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Simulation of Graphene Nanoribbon Field Effect Transistors

Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography.

Sub-10-nm graphene nanoribbons with atomically smooth edges from squashed carbon nanotubes

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method