Abstract:<p>Graphene nanoribbons (GNRs) are an emerging material for future nanoelectronic applications. Because GNR fabrication technology is still in an early stage, modelling of GNR field-effect transistors (GNRFETs) is significant for evaluating the performance metrics of these devices. In this study, the charge transport properties of double-gate monolayer GNRFETs with various channel widths and lengths and doped contacts are investigated. The Hamiltonian matrix of the device is derived using the nearest-neighbour tight-binding method. The self-consistent solutions of the Poisson and Schrödinger equations are obtained within a recursive non-equilibrium Green's function formalism using the successive over-relaxation method to reduce the time required for the simulation. The effects of channel length and width of the device on the electronic transport properties such as the total density of states, transmission coefficient, energy-resolved current spectrum, and current–voltage characteristics are investigated. The performance metrics of the device, including the subthreshold swing, drain-induced barrier lowering (DIBL), threshold voltage, and on/off current ratio, are computed. It is found that for narrower and longer devices, the subthreshold swing and DIBL decrease, whereas the on/off current ratio increases. In addition, when the width index is in the 3p+1 family, the device exhibits better switching performance. 7- armchair GNRFET at 7 nm exhibits an outstanding subthreshold swing of ∼67 mV/dec and a DIBL of ∼54 mV/V. Thus, the narrower and longer device is less affected by short-channel effects, and the lower leakage current during the off state enables better switching performance, making it a potential candidate for future nanoelectronic applications in low-power design.</p>

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

Design of bilayer graphene nanoribbon tunnel field effect transistor

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation

Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

A Numerical Study on Graphene Nanoribbon Heterojunction Dual-Material Gate Tunnel Fet

Quantum Simulation Study of Double Gate Hetero Gate Dielectric and LDD Doping Graphene Nanoribbon P–i–n Tunneling FETs

A Computational Study of Gate and Channel Engineering for GNRFETs Performance Enhancement

An Analytical Drain Current Model for Graphene Nanoribbon Tunnel Field-Effect Transistors

Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study

Pocket doping method on Improving the Performance of Graphene Nanoribbons Tunneling FET

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications

Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

Improved Performance of Tunneling FET Based on Hetero Graphene Nanoribbons