Abstract:At present, a great deal of interest is observed in devices based on two-dimentional (2D) materials, especially graphene, in the field of micro- and nanoelectronics. Graphene has robust hoheycomb lattice structure and unique properties such as ambipolarity, high carrier mobility, high conductivity. Nevertheless the properties of mono- and bilayer graphene are different. A significant difference in electrical characteristics of field-effect transistors (FETs) based on mono- and bilayer graphene was shown in few experimental works [1-3]. Note, that FET on bilayer graphene has demonstrated improved characteristics in comparison to FET on monolayer graphene [1,4,5]. Therefore a necessity to create models specifically for FETs on bilayer graphene appears. A tunable band gap is observed in the FET, when a perpendicular electrical field is applied to the bilayer graphene channel [6]. In the paper a quantum drift-diffusion model of FETs based on bilayer graphene is proposed. The model is a combination of electrical and physical models [7]. The mechanism of carrier transport along the bilayer graphene channel is considered. The electrostatic potential of the transistor channel is defined according to the band gap. Simulation of graphene dual-gate FET with channel length 4 µm is performed using the proposed model. Calculation of electrostatic potential of the investigated device structure was carried out. A good agreement with experimental data has been obtained for output characteristics of FETs based on monolayer graphene [8] using the developed model for this case. Different design parameters of FETs such as channel length, channel width, thickness of top- and back-gate dielectrics are used in the models. The proposed models of different FETs were included in the nanoelectronic devices simulation system NANODEV [9] developed at the BSUIR since 1995.

Design of bilayer graphene nanoribbon tunnel field effect transistor

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

A Numerical Study on Graphene Nanoribbon Heterojunction Dual-Material Gate Tunnel Fet

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

An Analytical Drain Current Model for Graphene Nanoribbon Tunnel Field-Effect Transistors

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors

Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

Graphene Nanoribbon Tunnel Field-Effect Transistor via Segmented Edge Saturation

Pocket doping method on Improving the Performance of Graphene Nanoribbons Tunneling FET

High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors

Graphene Nanoribbons from Tetraphenylethene-Based Polymeric Precursor: Chemical Synthesis and Application in Thin-Film Field-Effect Transistor

Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.

Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene

Numerical Study of Sub-10 nm Tunneling Field Effect Transistors Performance Based on Graphene Nanoribbons in Conventional Very Large-Scale Integrated Circuits

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates