Abstract:<p>Graphene nanoribbons (GNRs) are an emerging material for future nanoelectronic applications. Because GNR fabrication technology is still in an early stage, modelling of GNR field-effect transistors (GNRFETs) is significant for evaluating the performance metrics of these devices. In this study, the charge transport properties of double-gate monolayer GNRFETs with various channel widths and lengths and doped contacts are investigated. The Hamiltonian matrix of the device is derived using the nearest-neighbour tight-binding method. The self-consistent solutions of the Poisson and Schrödinger equations are obtained within a recursive non-equilibrium Green's function formalism using the successive over-relaxation method to reduce the time required for the simulation. The effects of channel length and width of the device on the electronic transport properties such as the total density of states, transmission coefficient, energy-resolved current spectrum, and current–voltage characteristics are investigated. The performance metrics of the device, including the subthreshold swing, drain-induced barrier lowering (DIBL), threshold voltage, and on/off current ratio, are computed. It is found that for narrower and longer devices, the subthreshold swing and DIBL decrease, whereas the on/off current ratio increases. In addition, when the width index is in the 3p+1 family, the device exhibits better switching performance. 7- armchair GNRFET at 7 nm exhibits an outstanding subthreshold swing of ∼67 mV/dec and a DIBL of ∼54 mV/V. Thus, the narrower and longer device is less affected by short-channel effects, and the lower leakage current during the off state enables better switching performance, making it a potential candidate for future nanoelectronic applications in low-power design.</p>

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Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Electronic Transport Properties of Top-Gated Epitaxial-Graphene Nanoribbon Field-Effect Transistors on Sic Wafers

Room-Temperature All-Semiconducting Sub-10-Nm Graphene Nanoribbon Field-Effect Transistors

Graphene Nanoribbons from Tetraphenylethene-Based Polymeric Precursor: Chemical Synthesis and Application in Thin-Film Field-Effect Transistor

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Fabrication and electrical properties of graphene nanoribbons

Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study

Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition

Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors

Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

Simulation of Graphene Nanoribbon Field Effect Transistors

Bottom-up Graphene Nanoribbon Field-Effect Transistors

High field transport properties of 2D and nanoribbon graphene FETs

Large-Scale Production Of Graphene Nanoribbons From Electrospun Polymers

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.