Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Sofia Aslanidou, Alberto García-García, Gemma Rius, Philippe Godignon Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

Electronic Transport Properties of Top-Gated Epitaxial-Graphene Nanoribbon Field-Effect Transistors on Sic Wafers

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Thermally-Limited Current Carrying Ability of Graphene Nanoribbons

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC

Fabrication and Characterization of Graphene Derived from SiC

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Variable Electrical Responses in Epitaxial Graphene Nanoribbons

Epitaxial Graphene Transistors on SiC Substrates

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment

Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

Scalable templated growth of graphene nanoribbons on SiC

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

Top-Gated Graphene Field-Effect-Transistors Formed by Decomposition of Sic

Epitaxially Grown Graphene Field-Effect Transistors with Electron Mobility Exceeding 1500 Cm2/vs and Hole Mobility Exceeding 3400 Cm2/vs

Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition