Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Epitaxially Grown Graphene Field-Effect Transistors with Electron Mobility Exceeding 1500 Cm2/vs and Hole Mobility Exceeding 3400 Cm2/vs

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Mobility in Graphene Double Gate Field Effect Transistors

Top‐ and Side‐gated Epitaxial Graphene Field Effect Transistors

High Performance Graphene FETs with Self-Aligned Buried Gates Fabricated on Scalable Patterned Ni-Catalyzed Graphene

Top-Gated Graphene Field-Effect-Transistors Formed by Decomposition of Sic

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Electronic Transport Properties of Top-Gated Epitaxial-Graphene Nanoribbon Field-Effect Transistors on Sic Wafers

Optimizing the fabrication process for high performance graphene field effect transistors.

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Quantitative Analysis of the Role of the First Layer in P‐ and N‐type Organic Field‐Effect Transistors with Graphene Electrodes

Embedded-gate Graphene Transistors for High-Mobility Detachable Flexible Nanoelectronics

Flexible field-effect transistors with high-quality and uniform single-layer graphene for high mobility

Epitaxial Graphene Transistors on SiC Substrates

Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect of Single Crystalline Graphene Grown on Ge(110)

100 GHz Transistors from Wafer Scale Epitaxial Graphene

The Transport and Quantum Capacitance Properties of Epitaxial Graphene

Direct Extraction of Carrier Mobility in Graphene Field-Effect Transistor Using Current-Voltage and Capacitance-Voltage Measurements

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

&Lt;inline-Formula> &Lt;tex-Math Notation="tex">${\rm MoS}_{2}$ &Lt;/tex-Math></inline-formula> Field-Effect Transistors with Graphene/Metal Heterocontacts