The computer-mediated living group, Microsoft Research Cambridge

A. Sellen,R. Banks,R. Harper,Steve Hodges

DOI: https://doi.org/10.1145/2648785

2014-09-01

interactions

Abstract:We aim to build new technologies, map out new design spaces, and provide different ways of looking at human behavior.

What problem does this paper attempt to address?

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Yu-Ming Lin,Christos Dimitrakopoulos,Keith A. Jenkins,Damon B. Farmer,Hsin-Ying Chiu,Alfred Grill,Phaedon Avouris

DOI: https://doi.org/10.1126/science.327.5966.734-b

2010-02-20

Abstract:High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate length. The result confirms the high potential of graphene for advanced electronics applications, marking an important milestone for carbon electronics.

Materials Science
High-frequency self-aligned graphene transistors with transferred gate stacks

Rui Cheng,Jingwei Bai,Lei Liao,Hailong Zhou,Yu Chen,Lixin Liu,Yung-Chen Lin,Shan Jiang,Yu Huang,Xiangfeng Duan

DOI: https://doi.org/10.1073/pnas.1205696109

IF: 11.1

2012-07-02

Proceedings of the National Academy of Sciences

Abstract:Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits.
Optimizing the fabrication process for high performance graphene field effect transistors.

Yanjie Wang,Bo-Chao Huang,Ming Zhang,Jason C. S. Woo

DOI: https://doi.org/10.1016/j.microrel.2011.09.036

IF: 1.6

2012-01-01

Microelectronics Reliability

Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.
Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass.

Lei Liao,Jingwei Bai,Rui Cheng,Hailong Zhou,Lixin Liu,Yuan Liu,Yu Huang,Xiangfeng Duan

DOI: https://doi.org/10.1021/nl201922c

IF: 10.8

2011-01-01

Nano Letters

Abstract:Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/μm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.
Research Progress of Graphene Radio Frequency Devices

Lu Qi,Lyu Hong-Ming,Wu Xiao-Ming,Wu Hua-Qiang,Qian He

DOI: https://doi.org/10.7498/aps.66.218502

IF: 0.906

2017-01-01

Acta Physica Sinica

Abstract:Graphene, the first realized two-dimensional material, has received much attention in electronic applications in recent years. With ultra-high carrier mobility and one atom thick structure, graphene becomes a promising semiconductor candidate for solving the problem of short channel effect in nanoscale metal-oxide-semiconductor field-effect transistor (MOSFET), and exploring its applications in radio frequency devices. How to develop the advantages of graphene transistor in radio frequency is an attractive research area. The first step is to obtain high quality graphene material. In this article we summarize the graphene growth methods commonly used in electronic field, including chemical vapor deposition on metal substrates and epitaxial method on wide bandgap semiconductor and insulator substrates. Another key factor to improve graphene transistor performance is to carefully design the device structure and process flow. Multi-finger gate and T-shaped gate are widely used in MOSFET. These two structures can significantly reduce gate resistance, and result in a better radio frequency performance. "Inverted process" is introduced for graphene FET fabrication, which is compatible with silicon-based back-end-of-line technology. It can reduce the damages to graphene during fabrication. Another improved self-aligned gate deposition process can lead to a good gate coupling and less parasitic parameters. These newly developed process play a prominent part in increasing the cut-off frequency and maximum oscillation frequency of graphene radio frequency devices. In addition, single crystal graphene is helpful in eliminating carriers scattering and improving the radio frequency properties of graphene transistor. So far, the highest cut-off frequency of graphene transistor reaches over 300 GHz by a few groups, but the maximum oscillation frequency remains low. Record-high maximum oscillation frequency is 200 GHz when gate length is 60 nm. Further improvement of maximum oscillation frequency needs to be tried out. Several graphene radio frequency circuits are also discussed in the paper. Some of the circuits have similar structures to silicon-based circuits, and others are designed based on the unique property of graphene transistor, like ambipolar transport properties. The new concept circuits have simpler structures than conventional circuits. With the rapid development of graphene growth and related integrating technology, the potential to use graphene in radio frequency field will be further increased.
Cellular Ti-6Al-4V structures with interconnected macro porosity for bone implants fabricated by selective electron beam melting.

P. Heinl,L. Müller,C. Körner,R. Singer,F. Müller

DOI: https://doi.org/10.1016/j.actbio.2008.03.013

IF: 10.633

2008-09-01

Acta Biomaterialia

Abstract:
Radio-frequency transistors from millimeter-scale graphene domains

Wei Zi-Jun,魏子钧,傅云义,刘竞博,王紫东,贾越辉,郭剑,任黎明,陈远富,张酣,黄如,Fu Yun-Yi,Liu Jing-Bo,Wang Zi-Dong,Jia Yue-Hui,Guo Jian,Ren Li-Ming,Chen Yuan-Fu,Zhang Han,Huang Ru,Zhang Xing

DOI: https://doi.org/10.1088/1674-1056/23/11/117201

2014-01-01

Chinese Physics B

Abstract:Graphene is a new promising candidate for application in radio-frequency (RF) electronics due to its excellent electronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors (RF-FETs). Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum oscillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.
Sub-100 nm channel length graphene transistors.

Lei Liao,Jingwei Bai,Rui Cheng,Yung-Chen Lin,Shan Jiang,Yongquan Qu,Yu Huang,Xiangfeng Duan

DOI: https://doi.org/10.1021/nl101724k

IF: 10.8

2010-01-01

Nano Letters

Abstract:Here we report high-performance sub-100 nm channel length graphene transistors fabricated using a self-aligned approach. The graphene transistors are fabricated using a highly doped GaN nanowire as the local gate with the source and drain electrodes defined through a self-aligned process and the channel length defined by the nanowire size. This fabrication approach allows the preservation of the high carrier mobility in graphene and ensures nearly perfect alignment between source, drain, and gate electrodes. It therefore affords transistor performance not previously possible. Graphene transistors with 45-100 nm channel lengths have been fabricated with the scaled transconductance exceeding 2 mS/μm, comparable to the best performed high electron mobility transistors with similar channel lengths. Analysis of and the device characteristics gives a transit time of 120-220 fs and the projected intrinsic cutoff frequency (f(T)) reaching 700-1400 GHz. This study demonstrates the exciting potential of graphene based electronics in terahertz electronics.
Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance

Yanjie Wang,Bo-Chao Huang,Ming Zhang,Congqin Miao,Ya-Hong Xie,Jason C. S. Woo

DOI: https://doi.org/10.5402/2012/891480

2012-01-01

ISRN Electronics

Abstract:Graphene FETs with top-gate and buried-gate structure has been studied. The buried-gate structure shows less fringing capacitance and more reliable contacts. High-performance graphene transistors with self-aligned buried gates have been fabricated. The graphene transistor shows field-effect mobility of over 6,000 cm 2 /V · s according to the transconductance measurement. The contact resistance and intrinsic mobility have been extracted from both curve fitting and transfer length measurement, and the two results agree well. This result paves the way of high-quality graphene transistor technology for the RF application.
Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors

Mengchuan Tian,Ben Hu,Haifang Yang,Chengchun Tang,Mengfei Wang,Qingguo Gao,Xiong,Zhenfeng Zhang,Tiaoyang Li,Xuefei Li,Changzhi Cu,Yanqing Wu

DOI: https://doi.org/10.1002/aelm.201800711

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:Radio frequency (RF) transistor based on graphene has attracted tremendous research efforts in the past few years. Despite the fact that such material is developed on a wafer-scale level, the majority of reported high performance of individual transistors is limited to individual or a few devices. As a result, the electronic uniformity and stability study on a large number of transistors remain unexplored especially for RF performance, which are the most critical factors for any practical applications. In this work, a comprehensive statistical analysis of the uniformity of DC and RF characteristics simultaneously for hundreds of transistors fabricated from transferred large area CVD-grown graphene in a 4-inch HfSiO/Si wafer is carried out for the first time. For devices with the same gate length of 0.8 mu m, the coefficient of variation (CV) for Dirac point voltage and extrinsic peak transconductance is only 0.07 and 0.03, respectively. In addition, the intrinsic f(T)*L-g is high up to about 20 GHz.mu m, which is among the best value for the graphene RF transistors. More importantly, the CV for the as-measured f(max)/f(T) is as low as 0.11, indicating highly uniform RF characteristics across the 4-inch wafer.
High Performance Graphene FETs with Self-Aligned Buried Gates Fabricated on Scalable Patterned Ni-Catalyzed Graphene

Wang, Yanjie,Huang, Bo-Chao,Zhang, Ming,Miao, Congqin

2011-01-01

Abstract:For the first time, we report a scalable technique to fabricate graphene transistors with self-aligned buried gates process. The high performance buried-gate graphene transistor has excellent field-effect mobility of 6,100cm2/V·s and 24,000 cm2/V·s before and after subtraction of contact resistance. To the best of our knowledge, this is the highest room temperature mobility for CVD graphene FETs reported to date. This result paves the way for manufacturable high quality graphene transistor technology.
Scalable T-Gate Aligned Gr-WS<sub>2</sub>-Gr Radio-Frequency Field-Effect Transistors

Chao-Hui Yeh,Zheng-Yong Liang,Yung-Chang Lin,Chun-Hao Ma,Ying-Hao Chu,Kazu Suenaga,Po-Wen Chiu

DOI: https://doi.org/10.1021/acsaelm.0c00742

IF: 4.494

2020-01-01

ACS Applied Electronic Materials

Abstract:Gigahertz field-effect transistors (FETs) have been the imperative need for the development of nanoelectronics based on atomically thin transition metal dichalcogenides (TMDs). Yet, WS2 FETs working in the gigahertz regime remain unexplored to date. Efforts to make high-frequency FETs from TMD materials have also been hampered by the lack of a scalable growth and fabrication scheme that meets the requirement of high-quality channels with low resistivity at contacts. Here, we report radio-frequency WS2 FETs with the channel grown by a devised chemical vapor deposition. The growth proceeds in a diffusion-controlled mode, allowing for site-selective synthesis of monolayer WS2 at the predefined graphene windows for low contact resistivity. The resulting WS2 FET exhibits an effective mobility of 112 cm(2)/V s at room temperature, with contact resistivity as low as 0.8 k Omega.mu m. An Al/A1O(x) T-gate is made on top of the active channel for self-aligned deposition of drain and source contacts to achieve an appreciable reduction of parasitic resistance and increase of device transconductance, thereby yielding a high intrinsic cutoff frequency of 3.5 GHz and a maximum oscillation frequency of 3.2 GHz in a long gate length of 1 mu m.
Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

Hongming Lyu,Qi Lu,Jinbiao Liu,Xiaoming Wu,Jinyu Zhang,Junfeng Li,Jiebin Niu,Zhiping Yu,Huaqiang Wu,He Qian

DOI: https://doi.org/10.1038/srep35717

IF: 4.6

2016-01-01

Scientific Reports

Abstract:In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation velocity. However, its main disadvantage, the lack of bandgap, has not been satisfactorily solved. As a result, maximum oscillation frequency (fmax) which indicates transistors’ power amplification ability has been disappointing. Here, we present submicron field-effect transistors with specially designed low-resistance gate and excellent source/drain contact, and therefore significantly improved fmax. The fabrication was assisted by the advanced 8-inch CMOS back-end-of-line technology. A 200-nm-gate-length GFET achieves fT/fmax = 35.4/50 GHz. All GFET samples with gate lengths ranging from 200 nm to 400 nm possess fmax 31–41% higher than fT, closely resembling Si n-channel MOSFETs at comparable technology nodes. These results re-strengthen the promise of graphene field-effect transistors in next generation semiconductor electronics.
200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors.

Yun Wu,Xuming Zou,Menglong Sun,Zhengyi Cao,Xinran Wang,Shuai Huo,Jianjun Zhou,Yang,Xinxin Yu,Yuechan Kong,Guanghui Yu,Lei Liao,Tangsheng Chen

DOI: https://doi.org/10.1021/acsami.6b05791

IF: 9.5

2016-01-01

ACS Applied Materials & Interfaces

Abstract:Graphene is a promising candidate in analog electronics with projected operation frequency well into the terahertz range. In contrast to the intrinsic cutoff frequency (fT) of 427 GHz, the maximum oscillation frequency (fmax) of graphene device still remains at low level, which severely limits its application in radio frequency amplifiers. Here, we develop a novel transfer method for chemical vapor deposition graphene, which can prevent graphene from organic contamination during the fabrication process of the devices. Using a self-aligned gate deposition process, the graphene transistor with 60 nm gate length exhibits a record high fmax of 106 and 200 GHz before and after de-embedding, respectively. This work defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra high frequency circuits.
Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Huilong Xu,Zhiyong Zhang,Haitao Xu,Zhenxing Wang,Sheng Wang,Lian-Mao Peng

DOI: https://doi.org/10.1021/nn201115p

IF: 17.1

2011-01-01

ACS Nano

Abstract:High-performance graphene field-effect transistors (G-FETs) are fabricated with carrier mobility of up to 5400 cm(2)/V·s and top-gate efficiency of up to 120 (relative to that of back gate with 285 nm SiO(2)) simultaneously through growing high-quality Y(2)O(3) gate oxide at high oxidizing temperature. The transconductance normalized by dimension and drain voltage is found to reach 7900 μF/V·s, which is among the largest of the published graphene FETs. In an as-fabricated graphene FET with a gate length of 310 nm, a peak transconductance of 0.69 mS/μm is realized, but further improvement is seriously hindered by large series resistance. Benefiting from highly efficient gate control over the graphene channel, the Dirac point voltage of the graphene FETs is shown to be designable via simply selecting a gate metal with an appropriate work function. It is demonstrated that the Dirac point voltage of the graphene FETs can be adjusted from negative to positive, respectively, via changing the gate material from Ti to Pd.
Top-gated chemical vapor deposition grown graphene transistors with current saturation.

Jingwei Bai,Lei Liao,Hailong Zhou,Rui Cheng,Lixin Liu,Yu Huang,Xiangfeng Duan

DOI: https://doi.org/10.1021/nl201331x

IF: 10.8

2011-01-01

Nano Letters

Abstract:Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO2) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 mu m to 100 nm show that complete current saturation can be achieved in 5.6 mu m devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO2 gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 mu S/mu m reported in CVD graphene to date.
Scalable Fabrication of High Performance Graphene FETs with Self-Aligned Buried Gates

Yanjie Wang,Bo-Chao Huang,Ming Zhang,Congqin Miao,Ya-Hong Xie,Jason C. S. Woo

DOI: https://doi.org/10.1109/icsict.2012.6467684

2012-01-01

Abstract:This paper presents a scalable technique to fabricate high performance graphene transistors with self-aligned buried gates process. Graphene FETs with two different structures have been compared and the buried gated structure shows less fringing capacitance and more reliable contacts. The buried-gate graphene transistor shows field-effect mobility of 6,100 cm2/V·s according to the transconductance measurement. This result paves the way for manufacturable high quality graphene transistor technology.
All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Md. Anamul Hoque,Antony George,Vasudev Ramachandra,Emad Najafidehaghani,Ziyang Gan,Richa Mitra,Bing Zhao,Satyaprakash Sahoo,Maria Abrahamsson,Qiuhua Liang,Julia Wiktor,Andrey Turchanin,Sergey Kubatkin,Samuel Lara-Avila,Saroj P. Dash

DOI: https://doi.org/10.1038/s41699-024-00489-2

IF: 10.516

2024-08-23

npj 2D Materials and Applications

Abstract:Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and correlations of such hybrid devices strongly depend on the quality of the materials via chemical vapor deposition (CVD) process, their interfaces and contact properties. However, detailed electronic transport and correlation properties of the 2D semiconductor field-effect transistor (FET) with vdW graphene contacts for understanding mobility limiting factors and metal-insulator transition properties are not explored. Here, we investigate electronic transport in scalable all-2D CVD-grown molybdenum disulfide (MoS 2 ) FET with graphene contacts. The Fermi level of graphene can be readily tuned by a gate voltage to enable a nearly perfect band alignment and, hence, a reduced and tunable Schottky barrier at the contact with good field-effect channel mobility. Detailed temperature-dependent transport measurements show dominant phonon/impurity scattering as a mobility limiting mechanisms and a gate-and bias-induced metal-insulator transition in different temperature ranges, which is explained in light of the variable-range hopping transport. These studies in such scalable all-2D semiconductor heterostructure FETs will be useful for future electronic and optoelectronic devices for a broad range of applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Operation of Graphene Transistors at GHz Frequencies

Yu-Ming Lin,Keith A. Jenkins,Alberto Valdes-Garcia,Joshua P. Small,Damon B. Farmer,Phaedon Avouris

DOI: https://doi.org/10.1021/nl803316h

2008-12-09

Abstract:Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for graphene transistors. The cutoff frequency fT is found to be proportional to the dc transconductance gm of the device. The peak fT increases with a reduced gate length, and fT as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step towards the realization of graphene-based electronics for high-frequency applications.

Other Condensed Matter,Materials Science
High-speed graphene transistors with a self-aligned nanowire gate

Lei Liao,Yung-Chen Lin,Mingqiang Bao,Rui Cheng,Jingwei Bai,Yuan Liu,Yongquan Qu,Kang L. Wang,Yu Huang,Xiangfeng Duan

DOI: https://doi.org/10.1038/nature09405

IF: 64.8

2010-09-01

Nature

Abstract:Graphene transistorsThere is considerable interest in graphene for high-speed electronics applications because of its high carrier mobility, but conventional device-fabrication processes produce significant defects in the atomically thin carbon sheets that constitute graphene, severely degrading device performance. Liao et al. report a novel fabrication approach that circumvents such degradation by placing a nanowire, with a metallic core and insulating shell, on top of the graphene as a gate electrode. 'Source' and 'drain' electrodes are then deposited on graphene through a self-alignment process that causes no appreciable damage to the graphene lattice and preserves its high carrier mobility. This unique device layout ensures that the edges of the source, drain and gate electrodes are positioned precisely, enabling a transistor performance that is comparable in speed with the best existing devices of a similar size.

multidisciplinary sciences

The computer-mediated living group, Microsoft Research Cambridge

100 GHz Transistors from Wafer Scale Epitaxial Graphene

High-frequency self-aligned graphene transistors with transferred gate stacks

Optimizing the fabrication process for high performance graphene field effect transistors.

Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass.

Research Progress of Graphene Radio Frequency Devices

Cellular Ti-6Al-4V structures with interconnected macro porosity for bone implants fabricated by selective electron beam melting.

Radio-frequency transistors from millimeter-scale graphene domains

Sub-100 nm channel length graphene transistors.

Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance

Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors

High Performance Graphene FETs with Self-Aligned Buried Gates Fabricated on Scalable Patterned Ni-Catalyzed Graphene

Scalable T-Gate Aligned Gr-WS<sub>2</sub>-Gr Radio-Frequency Field-Effect Transistors

Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors.

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

Scalable Fabrication of High Performance Graphene FETs with Self-Aligned Buried Gates

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Operation of Graphene Transistors at GHz Frequencies

High-speed graphene transistors with a self-aligned nanowire gate