Abstract:To break the scaling restriction on silicon-based field-effect transistors (FETs), two-dimensional (2D) transition metal dichalcogenides (TMDs) have been strongly proposed as alternative materials. To explore the device-scale-efficiency limit of TMD-based FETs, in this work, the ab initio quantum transport approach is utilized to study the transport properties of monolayer VTe2/WTe2 heterojunctions-based FETs supplied by double gates (DGs) with a 5-nm gate length (Lg). Our theoretical simulations demonstrate that the DG-cold-source VTe2/WTe2 FETs with 5-nm Lg and 2- or 3-nm proper underlap (UL) meet the basic requirements on the on-state current (Ion), power dissipation (PDP), and delay time (τ) for the 2028 needs of the International Technology Roadmap for Semiconductor (ITRS) 2013, which ensure their high-performance and low-power-dissipation device applications. Moreover, the DG-cold-source VTe2/WTe2-based FETs with 3-nm Lg and 2- or 3-nm UL meet the requirements on Ion, τ, and PDP for the 2028 needs of ITRS 2013. Additionally, by considering further the negative capacitance technology in devices, the parameters τ, Ion and PDP of the VTe2/WTe2-based FETs with 1-nm Lg and UL=3 nm meet well the needs for ITRS 2013 towards the device applications in the 2028 horizon. Our theoretical results uncover that the 2D DG-cold-source VTe2/WTe2 FETs can be worked as a new kind of promising material candidates to drive the scaling Moore's law down to 1 nm.

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