Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Sofia Aslanidou, Alberto García-García, Gemma Rius, Philippe Godignon Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

High Performance Graphene FETs with Self-Aligned Buried Gates Fabricated on Scalable Patterned Ni-Catalyzed Graphene

Scalable Fabrication of High Performance Graphene FETs with Self-Aligned Buried Gates

Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance

High-frequency self-aligned graphene transistors with transferred gate stacks

Optimizing the fabrication process for high performance graphene field effect transistors.

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

High-speed graphene transistors with a self-aligned nanowire gate

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Record high RF performance for epitaxial graphene transistors

Transfer Printing of CVD Graphene FETs on Patterned Substrates

Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties

Epitaxially Grown Graphene Field-Effect Transistors with Electron Mobility Exceeding 1500 Cm2/vs and Hole Mobility Exceeding 3400 Cm2/vs

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

Enhanced Performance of Graphene Transistor with Ion-Gel Top Gate

Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass.

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Solution-processed Carbon Nanotubes Based Transistors with Current Density of 1.7 Ma/μm and Peak Transconductance of 0.8 Ms/μm