Abstract:Graphene offers exceptional properties, such as ultra-high carrier mobility, near-ballistic transport characteristics, and ultra-high-frequency operational response, making it an ideal material for radio-frequency devices and high-speed optical communications. To realize its potential applications, high-quality graphene films must be integrated onto target substrates with reliability, uniformity, and scalability. Despite significant progress in the chemical vapor deposition of high-quality graphene on catalytic metal substrates, the transfer of such films onto application-targeted substrates remains necessary for large-scale technological use, but it faces challenges like contaminations and cracks. Graphene's flexibility and single-atom thickness make it vulnerable to damage and folding during the transfer process due to force disturbances and uneven force distribution. Traditional graphene transfer methods employ organic polymers as a medium and remove them using organic solvents after transferring graphene onto the desired substrates. However, this repetitive process generates organic waste and leaves unavoidable contamination due to the limited solubility of the polymer. Furthermore, selective interlacing of organic solvents during polymer removal can detach graphene from the substrate and cause cracks. In this study, we demonstrate a novel approach to address these issues. Instead of using organic polymers, we directly use the photoresist as the transfer medium to mechanically delaminate graphene from the metal growth substrate onto the targeted substrate. By doing so, we eliminate the need for repeated polymer coating on the graphene surface, enabling successful transfer without crack formation, wrinkles, or unintentional doping. The strong interaction between graphene and the photoresist, coupled with the weakened interaction between graphene and the growth substrate due to oxidation, ensures crack-free delamination. Moreover, the photoresist serves as a patterned mask plate for exposure, etching, and other subsequent device fabrication processes. As a result, the electrical properties of graphene are improved, achieving an average carrier mobility of 6200 cm(2)center dot V-1 center dot s(-1). This integrated approach not only enhances the device performance of two-dimensional materials but also paves the way for future applications of such materials in electronics and photonics. In conclusion, our method offers a promising solution for the successful transfer and device fabrication of graphene, enhancing its potential in the field of electronics and photonics.

Transfer Printing of CVD Graphene FETs on Patterned Substrates

Optimizing the fabrication process for high performance graphene field effect transistors.

Clean and Efficient Transfer of CVD-grown Graphene by Electrochemical Etching of Metal Substrate

Transfer-free fabrication of graphene transistors

Modified RCA clean transfer of graphene and all-carbon electronic devices fabrication

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Transfer printing approach to all-carbon nanoelectronics

Transfer of Cvd-Grown Monolayer Graphene Onto Arbitrary Substrates

Toward Clean and Crackless Transfer of Graphene

Roll‐to‐Roll Dry Transfer of Large‐Scale Graphene

High Performance Graphene FETs with Self-Aligned Buried Gates Fabricated on Scalable Patterned Ni-Catalyzed Graphene

Printed Graphene Circuits

The Effects of the Transfer Process on the Quality of CVD-grown Graphene

High mobility graphene field effect transistors on flexible EVA/PET foils

Step-by-step Monitoring of CVD-graphene During Wet Transfer by Raman Spectroscopy

Crack-Free Transfer of Graphene Wafers Via Photoresist As Transfer Medium

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer‐Free Device Fabrication

A Two-In-One Process For Reliable Graphene Transistors Processed With Photo-Lithography

Transfer of graphene onto arbitrary substrates via sublimable carrier

Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line

Nanofabrication of graphene field-effect transistors by thermal scanning probe lithography