Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Sofia Aslanidou, Alberto García-García, Gemma Rius, Philippe Godignon Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line

Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform

Optimizing the fabrication process for high performance graphene field effect transistors.

Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC

Wafer-scalable High-Performance CVD Graphene Devices and Analog Circuits

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

Inverted Process for Graphene Integrated Circuits Fabrication

An efficient GFET structure

Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements

Graphene Transistors for Interfacing with Cells: Towards a Deeper Understanding of Liquid Gating and Sensitivity

Fabrication and Characterization of Micrometer Scale Graphene Structures for Large-Scale Ultra-Thin Electronics

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

Transfer Printing of CVD Graphene FETs on Patterned Substrates

Scalable Fabrication of High Performance Graphene FETs with Self-Aligned Buried Gates

Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

High-frequency self-aligned graphene transistors with transferred gate stacks

Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

Atomically Precise Graphene Nanoribbon Transistors with Long-Term Stability and Reliability

A Two-In-One Process For Reliable Graphene Transistors Processed With Photo-Lithography

Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation