Abstract:Abstract The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO 2 /Si exhibited high carrier mobility reaching up ~10,000 cm 2 V −1 s −1 , with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm 2 V −1 s −1 . Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to achieve efficient and high - quality transfer of large - area two - dimensional materials (especially graphene) on semiconductor wafers to meet the requirements of advanced electronic devices and optoelectronic devices. Specifically, traditional wet - transfer methods have problems such as cracks, contamination, wrinkles and doping, which will significantly reduce the performance of graphene. Therefore, this paper proposes a method based on gradient surface - energy modulation to achieve lossless, clean and ultra - flat graphene transfer. ### Main problems and solutions 1. **Damage during transfer**: - Traditional methods, such as using PMMA films as transfer media, are prone to introduce cracks and wrinkles during the transfer process, resulting in an uneven graphene surface. - Solution: By designing a multi - layer transfer medium and using gradient surface - energy modulation (GSE), the integrity and flatness of graphene during transfer are ensured. 2. **Contamination and doping**: - During the wet - transfer process, water and polymer residues will cause graphene surface contamination and doping, affecting its electrical properties. - Solution: Adopt a dry - transfer method to avoid water adsorption, and use a small - molecule buffer layer (such as borneol) to reduce the adsorption of contaminants. 3. **Uniformity and electrical properties**: - Graphene transferred by traditional methods exhibits non - uniform resistance and low carrier mobility over a large area. - Solution: By optimizing the transfer process, high - uniformity graphene transfer is achieved, with a resistance deviation of only 6% and a carrier mobility as high as approximately 10,000 cm²V⁻¹s⁻¹, and even up to 280,000 cm²V⁻¹s⁻¹ at low temperatures. 4. **Quantum Hall effect and fractional quantum Hall effect**: - These effects are difficult to observe in traditionally transferred graphene. - Solution: The GSE - transferred graphene encapsulated by h - BN enables the observation of the quantum Hall effect and the fractional quantum Hall effect at room temperature and low temperature respectively, proving its high quality. 5. **Thermal emitter applications**: - Graphene applications in thermal emission in the near - infrared region require high - quality large - area graphene. - Solution: An integrated thermal emitter array is fabricated using graphene transferred by the GSE method, demonstrating significant broadband emission characteristics. ### Summary This paper proposes a general method based on gradient surface - energy modulation, which successfully solves the key problems in large - area graphene transfer, including cracks, contamination, wrinkles and doping, etc., and achieves lossless, clean and ultra - flat graphene transfer. This provides important technical support for integrating large - area two - dimensional materials into advanced electronic and optoelectronic devices in the future.

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