Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer.

Batch Synthesis of Transfer-Free Graphene with Wafer-Scale Uniformity

Wafer-Scale Graphene Growth on Si/SiO 2 Substrates via Metal-Free Chemical Vapor Deposition

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Wafer-scale synthesis and transfer of monolayer graphene

Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Transfer-free fabrication of graphene transistors

Synthesis of Wafer‐Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications

Dry transfer method for suspended graphene on lift-off-resist: simple ballistic devices with Fabry-Pérot interference

Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Toward Direct Growth of Ultra‐Flat Graphene

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Insulating SiO 2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer

Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment

Rapid and Scalable Transfer of Large‐area Graphene Wafers

Wafer-scale growth of single-crystal graphene on vicinal Ge(001) substrate

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

Growth Mechanism of Transfer-Free Graphene Synthesized from Different Carbon Sources and Verified by Ion Implantation