Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer

Li Tao,Milo Holt,Jongho Lee,Harry Chou,Stephen J. McDonnell,Domingo A. Ferrer,Matias Babenco,Robert M. Wallace,Sanjay K. Banerjee,Rodney S. Ruoff,Deji Akinwande

DOI: https://doi.org/10.48550/arXiv.1205.1546

2012-05-08

Abstract:Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ray diffraction and electron backscatter diffraction. Noticeably, phase transition of copper film is observed on technologically ubiquitous oxidized Si wafer where the oxide is a standard amorphous thermal oxide. Ion mass spectroscopy indicates that the copper films can be purposely hydrogen-enriched during a hydrogen anneal which subsequently affords graphene growth with a sole carbonaceous precursor for low defect densities. Owing to the strong hexagonal lattice match, the graphene domains align to the Cu (111) domains, suggesting a pathway for increasing the graphene grains by maximizing the copper grain sizes. Fabricated graphene transistors on a flexible polyimide film yield a peak carrier mobility ~4,930 cm2/Vs.

Materials Science,Chemical Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve the synthesis of large - area, high - quality single - layer graphene on standard silicon oxide (SiO₂/Si) wafers. Specifically, the research objective is to grow single - layer graphene with high coverage (>97%) and low defect rate (>95% defects are negligible) on evaporated and deposited copper (111) thin films through Chemical Vapor Deposition (CVD) technology, so as to meet the requirements for direct integration with the standard CMOS process, thereby promoting the development of large - scale graphene nanoelectronics.

The key challenges mentioned in the paper include:
1. **Crystallization of copper thin films**: Copper thin films deposited on standard silicon oxide wafers are usually amorphous. After heat treatment, they will form multiple grains with random grain orientations. In order to obtain high - quality graphene, it is necessary to transform the copper thin films from an amorphous state to a crystalline state with (111) - plane orientation at the growth temperature.
2. **The role of hydrogen**: Hydrogen can be enriched in copper thin films during the high - temperature saturated annealing process, which helps to improve the quality of graphene and reduce defects.
3. **Uniformity and quality of graphene**: By optimizing the growth conditions, the uniform coverage of graphene on the wafer is achieved, and its high quality comparable to that of exfoliated single - layer graphene is ensured.

Through these methods, the researchers successfully synthesized high - quality single - layer graphene on 100 - millimeter - diameter silicon oxide wafers and verified its potential for preparing high - performance field - effect transistors (GFETs) on flexible substrates.