Abstract:The mechanisms determining the growth of high-quality monolayer and bilayer graphene on Cu using chemical vapor deposition (CVD) were investigated. It is shown that graphene growth on Cu is not only determined by the process parameters during growth, but also substantially influenced by the quality of Cu substrate and how the Cu substrate is pretreated. It is found that the micro-topography of the Cu surface strongly affects the uniformity of grown graphene while the purity of the Cu film determines the number of synthesized graphene layers at low pressure conditions. On the other hand, a minimum partial pressure of hydrocarbon is required for graphene to cover the Cu surface during graphene growth. The optimized bilayer graphene exhibits a maximum hole (electron) mobility of 5500 cm2V–1s–1 (3900 cm2V–1s–1). A new growth mode resulting in tetragonal shaped graphene domain, which is different from the known lobe structure (for monolayer) or hexagonal (for few layer) mode, is also discovered under our experimental conditions. Furthermore, high resolution transmission electron microscopy has revealed the non-ideal nature of CVD graphene structure for the first time, indicating an important cause of electron/hole mobility degradation that is typically observed in CVD graphene. This observation could be crucial for optimization of the CVD process to further improve the quality of graphene.

Synthesis of Highly Uniform Monolayer Graphene by Etching the Multilayer Spots for Electronic Devices

Uniform Single-Layer Graphene Growth on Recyclable Tungsten Foils

Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Monolayer Graphene Growth Using Additional Etching Process in Atmospheric Pressure Chemical Vapor Deposition

Large-Area Synthesis of High-Quality and Uniform Monolayer Graphene Without Unexpected Bilayer Regions

Low-Temperature Chemical Vapor Deposition Growth Of Graphene From Toluene On Electropolished Copper Foils

Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu

Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper Using Chemical Vapor Deposition

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

The role of etching on growth of adlayer graphene by chemical vapor deposition

Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper

Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

Layered Graphene Growth Directly on Sapphire Substrates for Applications

Chemical vapor deposition growth of few-layer graphene for transparent conductive films

Preparation and multilayer transfer of high-quality monocrystalline graphene grown on centimeter-Cu (111) substrate

High-quality Bilayer Graphene Grown on Softened Copper Foils by Atmospheric Pressure Chemical Vapor Deposition

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates

Homogeneous Optical and Electronic Properties of Graphene Due to the Suppression of Multilayer Patches During Cvd on Copper Foils

Clean and Efficient Transfer of CVD-grown Graphene by Electrochemical Etching of Metal Substrate

Synthesis of Multilayer Graphene with Controlled C Supply