Abstract:The integrity and cleanliness of graphene film is the core of graphene devices. However, the cleanliness and integrity of the graphene film can only be ensured when the transferred film area is small (less than 2╳2 cm 2 ), which leads to the extremely low preparation efficiency of graphene devices and limits its industrialization applications. But, the integrity and cleanliness of the graphene film will decrease with the increase of the transfer film area. Therefore, the clean and intact transfer of large area graphene films is extremely difficult, which limits the performance and development of graphene electronic devices. Hence, a wafer-scale(6-inch), intact and clean transfer method (Surface tension traction method) of chemical vapor deposition (CVD) copper-based monolayer, multilayer graphene and single crystals graphene are proposed, which is suitable for various target substrate (rigid substrate, such as:SiO 2 /Si, GaN, glass etc. or flexible substrate, such as PI, PET, PEN, etc.). The use of the watch glass ensures that the graphene film is not directly contacted with the transfer medium (slides, glass or silicon wafers) when the film is transferred between various solutions. And the surface tension of the water can ensure that the graphene is spread on the water surface, which minimizing the probability of graphene breakage, wrinkles and contamination. This also directly greatly reduces the residue of the PMMA layer. The average of 62500 spots of Raman spectrum peak intensity ratios (I D /I G ) is only 0.02318, The average hole mobility of GFETs prepared from graphene transferred can reach 3438 ± 84 cm 2 /Vs, which reveals the outstanding quality and uniformity of graphene transferred. The graphene transferred is expected to be applied in the fields of transparent, conductive electrodes, flexible films, electronic devices, heat dissipation and anti-corrosion, etc, to promote the industrial production of CVD graphene films.

Wafer-scale synthesis and transfer of monolayer graphene

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer.

Wafer-Scale Graphene Growth on Si/SiO 2 Substrates via Metal-Free Chemical Vapor Deposition

Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer

Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

Transfer of Cvd-Grown Monolayer Graphene Onto Arbitrary Substrates

High mobility graphene field effect transistors on flexible EVA/PET foils

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Fabrication and Characterization of Graphene Derived from SiC

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition

Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment

Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Synthesis of Wafer‐Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications

Graphene synthesis by chemical vapor deposition and transfer by a roll-to-roll process

Surface tension traction transfer method for wafer-scale device grade graphene film

Selective Mechanical Transfer of Graphene from Seed Copper Foil Using Rate Effects

Batch Synthesis of Transfer-Free Graphene with Wafer-Scale Uniformity