Abstract:Bilayer graphene has attracted wide attention due to its unique band structure and bandgap tunability under specific (Bernal or AB) stacking order. However, it remains challenging to tailor the stacking order and to simultaneously produce large-scale and high-quality bilayer graphene. This work introduces a fast and reliable method of growing high-quality Bernal stacked large-area (>3 in. X 3 in.) bilayer graphene film or trilayer graphene domains (30 pm x 30 mu m) using chemical vapor deposition (CVD) on engineered Cu-Ni alloy catalyst films. The AB stacking order is evaluated by Raman spectra, electron diffraction pattern, and dual gate field-effect-transistor (FET) measurements, and a near-perfect AB stacked bilayer graphene coverage (>98%) is obtained. The synthesized bilayer and trilayer graphene with Bernal stacking exhibit electron mobility as high as 3450 cm(2)/(V.s)and 1500 cm(2)/(V.s), respectively, indicating comparable quality with respect to exfoliated bilayer and trilayer graphene. The record high (for CVD bilayer graphene) ON to OFF current ratios (up to 15) obtained for a large number (>50) of dual-gated FETs fabricated at random across the large-area bilayer graphene film also corroborates the success of our synthesis technique. Moreover, through catalyst engineering, growth optimization, and element analysis of catalyst, it is shown that achieving surface catalytic graphene growth mode and precise control of surface carbon concentration are key factors determining the growth of high quality and large area Bernal stacked bilayer graphene on Cu-Ni alloy. This discovery can not only open up new vistas for large-scale electronic and photonic device applications of graphene but also facilitate exploration of novel heterostructures formed with emerging beyond graphene two-dimensional atomic crystals.

Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition

Synthesis of Homogenous Bilayer Graphene on Industrial Cu Foil

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

High-quality Bilayer Graphene Grown on Softened Copper Foils by Atmospheric Pressure Chemical Vapor Deposition

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Homogeneous bilayer graphene film based flexible transparent conductor

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Wafer-scale synthesis and transfer of monolayer graphene

Semiconducting Behavior of Bilayer Graphene Synthesized by Plasma-Enhanced Chemical Vapor Deposition and Its Application in Field Effect Transistors

Fast synthesis of large-area bilayer graphene film on Cu

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Large-Area Synthesis of High-Quality and Uniform Monolayer Graphene Without Unexpected Bilayer Regions

Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition

Highly Uniform 300 mm Wafer-Scale Deposition of Single and Multilayered Chemically Derived Graphene Thin Films

Synthesis Of Large-Area Single-Crystal Graphene

Ultrafast growth of wafer-scale fold-free bilayer graphene

A Wrinkling and Etching-Assisted Regrowth Strategy for Large-Area Bilayer Graphene Preparation on Cu

Chemical Vapor Deposition Growth of Bernal-Stacked Bilayer Graphene by Edge-Selective Etching with H2O

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Direct synthesis of single-crystal bilayer graphene on various dielectric substrates

Observation of tunable electrical bandgap in large-area twisted bilayer graphene synthesized by chemical vapor deposition