Abstract:The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has been shown to exhibit a promising value for electrical conductivity. Graphene would thus appear to alleviate some of the drawbacks associated with silicon-based transistors. It is for this reason why such a material is considered one of the most prominent candidates to replace silicon within nano-scale transistors. The major crux here, is that graphene is intrinsically gapless, and yet, transistors require a band-gap pertaining to a well-defined ON/OFF logical state. Therefore, exactly as to how one would create this band-gap in graphene allotropes is an intensive area of growing research. Existing methods include nano-ribbons, bilayer and multi-layer structures, carbon nanotubes, as well as the usage of the graphene substrates. Graphene transistors can generally be classified according to two working principles. The first is that a single graphene layer, nanoribbon or carbon nanotube can act as a transistor channel, with current being transported along the horizontal axis. The second mechanism is regarded as tunneling, whether this be band-to-band on a single graphene layer, or vertically between adjacent graphene layers. The high-frequency graphene amplifier is another talking point in recent research, since it does not require a clear ON/OFF state, as with logical electronics. This paper reviews both the physical properties and manufacturing methodologies of graphene, as well as graphene-based electronic devices, transistors, and high-frequency amplifiers from past to present studies. Finally, we provide possible perspectives with regards to future developments.

High-speed graphene transistors with a self-aligned nanowire gate

High-frequency self-aligned graphene transistors with transferred gate stacks

Sub-100 nm channel length graphene transistors.

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Nanotube and Nanowire Transistors

100 GHz Transistors from Wafer Scale Epitaxial Graphene

High-Performance Dual-Gate Transistors Based on Aligned Carbon Nanotubes

High Performance Graphene FETs with Self-Aligned Buried Gates Fabricated on Scalable Patterned Ni-Catalyzed Graphene

Enhanced Performance of Graphene Transistor with Ion-Gel Top Gate

Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

Scalable Fabrication of High Performance Graphene FETs with Self-Aligned Buried Gates

Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices

Optimizing the fabrication process for high performance graphene field effect transistors.

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance

Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation

Ge/Si nanowire heterostructures as high-performance field-effect transistors

Sub-10-nm graphene nanoribbons with atomically smooth edges from squashed carbon nanotubes

Carbon nanotube transistors with graphene oxide films as gate dielectrics

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors