Abstract:Abstract Transistors on aligned semiconducting carbon nanotubes (A-CNTs) have been considered a promising substitute for mainstream Si transistors to extend integrated circuit (IC) technology owing to their potential advantages of easy miniaturization and high energy efficiency, but whether A-CNT FETs can be scalably fabricated with ultrascaled whole dimensions while maintaining high performance remains questionable. Here, we explore the whole size scaling down potential of A-CNT transistors and demonstrate the possibility of implementing such small-geometry transistors in ultra-large-scale ICs that consist of billions of transistors. A-CNT transistors with a contacted gate pitch (CGP) of 175 nm have been achieved by simultaneously scaling the gate length and the contact length, and exhibit an on-current of 2.24 mA/μm and a peak transconductance of 1.64 mS/μm, surpassing silicon 45 nm node transistors in terms of both size and electronic performance. A static random-access memory (SRAM) cell has been built using six A-CNT transistors in an area of 0.967 μm2, which is comparable to the commercial silicon 90 nm technology node and is the smallest SRAM cell based on non-Si semiconductors. Furthermore, a full-contact structure is introduced between the metal and A-CNTs to achieve a contact resistance as low as 90 Ω·μm and to reduce the dependence on the contact length. A-CNT transistors downsized to a CGP of 55 nm (corresponding to the silicon 10 nm technology node) have been demonstrated to outperform 10 nm Si MOS transistors in terms of carrier mobility and Fermi velocity, indicating the tremendous potential of A-CNT transistors in high-performance digital ICs of sub 10 nm nodes.

High-Performance Dual-Gate Transistors Based on Aligned Carbon Nanotubes

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Carbon Nanotube Materials for Future Integrated Circuit Applications

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors And Integrated Circuits With Yttrium Oxide

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

High-Performance Carbon Nanotube Thin-Film Transistor Technology

Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

On/Off Ratio Improvement of Carbon Nanotube Thin Film Transistors by Combining Asymmetric Gate Design and Chemical Doping

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors

Configurable Multifunctional Integrated Circuits Based On Carbon Nanotube Dual-Material Gate Devices