Abstract:Abstract Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors. However, due to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties. Herein, we demonstrate the fabrication of atomically thin single-crystalline Al 2 O 3 (c-Al 2 O 3 ) as the high-quality top-gate dielectric layer in 2D FETs. By using the epitaxial lift-off and intercalative oxidation techniques, a stable, stoichiometric, and atomically thin c-Al 2 O 3 layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface. Owing to the favorable crystalline structure and well-defined interfaces, the gate leakage current, interface state density, and dielectric strength meet the International Roadmap for Devices and Systems (IRDS) requirements for low-power devices. By means of a one-step transfer process of the source, drain, dielectric materials, and gate onto molybdenum disulfide (MoS 2 ), the self-aligned top-gate MoS 2 FET devices are fabricated. Since direct lithography or high-energy deposition can be avoided during fabrication, the MoS 2 FETs deliver outstanding performance including a steep subthreshold swing of 61 mV/dec, extremely high on/off current ratio of 10 8 , and negligible hysteresis of 10 mV. In addition, a batch of 100 FETs with good uniformity of electronical characteristics has been fabricated. The innovative technique and materials demonstrate the possibility of producing high-quality single-crystalline oxides such as ferroelectric oxides, wide-bandgap oxides, and magnetic oxides suitable for integration into fully scalable advanced 2D FETs including negative capacitance transistors and spin transistors.

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