Abstract:Abstract Transistors on aligned semiconducting carbon nanotubes (A-CNTs) have been considered a promising substitute for mainstream Si transistors to extend integrated circuit (IC) technology owing to their potential advantages of easy miniaturization and high energy efficiency, but whether A-CNT FETs can be scalably fabricated with ultrascaled whole dimensions while maintaining high performance remains questionable. Here, we explore the whole size scaling down potential of A-CNT transistors and demonstrate the possibility of implementing such small-geometry transistors in ultra-large-scale ICs that consist of billions of transistors. A-CNT transistors with a contacted gate pitch (CGP) of 175 nm have been achieved by simultaneously scaling the gate length and the contact length, and exhibit an on-current of 2.24 mA/μm and a peak transconductance of 1.64 mS/μm, surpassing silicon 45 nm node transistors in terms of both size and electronic performance. A static random-access memory (SRAM) cell has been built using six A-CNT transistors in an area of 0.967 μm2, which is comparable to the commercial silicon 90 nm technology node and is the smallest SRAM cell based on non-Si semiconductors. Furthermore, a full-contact structure is introduced between the metal and A-CNTs to achieve a contact resistance as low as 90 Ω·μm and to reduce the dependence on the contact length. A-CNT transistors downsized to a CGP of 55 nm (corresponding to the silicon 10 nm technology node) have been demonstrated to outperform 10 nm Si MOS transistors in terms of carrier mobility and Fermi velocity, indicating the tremendous potential of A-CNT transistors in high-performance digital ICs of sub 10 nm nodes.

Scaling carbon nanotube CMOS FETs towards quantum limit

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Carbon Nanotube Materials for Future Integrated Circuit Applications

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

Exploration of Vertical Scaling Limit in Carbon Nanotube Transistors

Deep-Submicrometer Complementary Metal-Oxide-Semiconductor Transistors Based on Carbon Nanotube Films

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Carbon nanotube-based CMOS transistors and integrated circuits

Improving Subthreshold Swing to Thermionic Emission Limit in Carbon Nanotube Network Film-Based Field-Effect

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Sub-10 Nm Two-Dimensional Transistors: Theory and Experiment

Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution