Vertical Transistors Based on Two-Dimensional Semiconductors
Zhikai Le,Xiao Liu,Yunxin Li,Liting Liu,Yuan Liu
DOI: https://doi.org/10.1360/tb-2023-0081
2023-01-01
Abstract:With transistor channel length scaled to sub-10 nm, silicon (Si)-based semiconductor scaling technology has gradually shown more and more challenges. The most notable one is the poor electrostatic control of the gate electric field on the silicon channel with increased power consumption and short-channel effect. On the other hand, two-dimensional semiconductors feather dangling-bonds-free surface, and the carriers are confined in their atomically thin channels, exhibiting excellent electronic performances at atomic-thin body thickness, which is expected to further scale the size of transistors. Two-dimensional semiconductor transistors with short channels have been successfully fabricated by various methods, but usually require complex equipment and high-energy fabrication processes, and become increasingly difficult in the sub-10 nm or sub-5 nm region. Vertical field-effect transistors (VEFTs), in which the channel material is sandwiched between source-drain electrodes, are expected to achieve ultra-short channel-length devices. Vertical transistors have naturally shorter channel lengths, are defined only by the thickness of the semiconductor material, and thus can deliver large drive currents that were previously unachievable using conventional planar device structures. In order to achieve effective gate modulation and current switching performance, traditional organic vertical transistors use mesh-like conductive materials such as metal nanowires and carbon nanotubes as the bottom electrode, through which the gate electric field can penetrate. Although the porous electrode as the bottom electrode reduces the shielding effect of the gate electric field and improves the gate control of the device, its rough surface hinders the construction of ultrashort-channel vertical transistors. On the other hand, from a performance perspective, VFETs based on perforated electrodes cannot fully unlock the potential that vertical transistors may offer. In recent years, with the emergence of graphene, a new type of graphene-based vertical transistor has been developed. Due to the finite density of states and weak electrostatic shielding effect, graphene exhibits field-tunable work functions and partial electrostatic transparency. Thus, graphene can be used as a unique semitransparent electrode to build vertical transistors. In this structure, vertical transistors based on a variety of semiconductor channel materials have been reported, including two-dimensional semiconductors, silicon and germanium, thin-film oxide semiconductors, and organic semiconductors. According to the mechanism of carrier injection in the semiconductor channel, vertical transistors can be classified into two categories: Thermionic vertical transistors and tunneling vertical transistors. In a thermionic vertical transistor, a thin-film semiconductor is used as the channel material for a van der Waals contact to graphene forming a Schottky barrier, and the applied gate voltage effectively modulates the work function of graphene, the Schottky barrier height across the graphene/semiconductor interface, resulting in large on/off ratios unattainable with conventional planar graphene transistors. Whereas in vertical tunneling transistors, two graphene layers serve as source and drain electrodes, separated by a thin insulator layer, the switch relies on gate voltage tunability of the density of states in graphene and the efficient tunneling barrier height between graphene electrodes. Both tunneling transistors and field effect transistors have been shown to have extremely large on/off ratios or current densities. But within the ultrashort vertical channel length, the vertical short channel effect, the vertical Fermi level pinning effect, and the carrier saturation effect play an important role in high-performance vertical transistors. The channel length scaling limit of vertical transistors and obtaining high current densities are still challenges. This paper reviews the basic progress in the construction of vertical transistors based on two-dimensional semiconductors, including the basic structure, working mechanism and device performance.