Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Record high RF performance for epitaxial graphene transistors

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Record maximum oscillation frequency in C-face epitaxial graphene transistors

Operation of Graphene Transistors at GHz Frequencies

High Performance Double-Gate Graphene Radio-Frequency Transistors

Optimizing the fabrication process for high performance graphene field effect transistors.

Graphene FET on Diamond for High-Frequency Electronics

High-frequency self-aligned graphene transistors with transferred gate stacks

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

State-of-the-art graphene transistors on hexagonal boron nitride, high-k, and polymeric films for GHz flexible analog nanoelectronics

Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

High Performance Graphene FETs with Self-Aligned Buried Gates Fabricated on Scalable Patterned Ni-Catalyzed Graphene

Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

Radio-frequency transistors from millimeter-scale graphene domains

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates

Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors.