Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Optimizing the fabrication process for high performance graphene field effect transistors.

Fabrication and Characterization of Graphene Derived from SiC

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

Record high RF performance for epitaxial graphene transistors

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Top‐ and Side‐gated Epitaxial Graphene Field Effect Transistors

Short channel effects in graphene-based field effect transistors targeting radio-frequency applications

Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

RF performance projections for 2D graphene transistors: Role of parasitics at the ballistic transport limit

Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Transfer Printing of CVD Graphene FETs on Patterned Substrates

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

High Performance Graphene FETs with Self-Aligned Buried Gates Fabricated on Scalable Patterned Ni-Catalyzed Graphene

Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon

Systhesis and Devices of Graphene

(Invited) Graphene FETs: Promises and Challenges