Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

Fabrication and Characterization of Graphene Derived from SiC

p-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies

Epitaxial Graphene Transistors on SiC Substrates

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Gaas-Based Metal-Insulator-Semiconductor Structures with Low Interface Traps Using Molecular-Beam Epitaxy and Chemical-Vapor-Deposition

Quasi-free-standing Bilayer Epitaxial Graphene Field-Effect Transistors on 4H-Sic (0001) Substrates

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

High-Transconductance Graphene Solution-Gated Field Effect Transistors

Suppression of Leakage Current in Carbon Nanotube Field-Effect Transistors

Top‐ and Side‐gated Epitaxial Graphene Field Effect Transistors

Scalable templated growth of graphene nanoribbons on SiC

Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC

Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s

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Optimizing the fabrication process for high performance graphene field effect transistors.

The Gate Leakage Current in Graphene Field-Effect Transistor

Low Carrier Density Epitaxial Graphene Devices On SiC

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit