Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

State-of-the-art graphene transistors on hexagonal boron nitride, high-k, and polymeric films for GHz flexible analog nanoelectronics

Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride

Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates

10.1063/1.4772541.1

High Mobility Flexible Graphene Field-Effect Transistors and Ambipolar Radio-Frequency Circuits

Multi-Finger Flexible Graphene Field Effect Transistors with High Bendability

Highly Bendable High-Mobility Graphene Field Effect Transistors with Multi-Finger Embedded Gates on Flexible Substrates

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High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut-Off Frequency

Flexible field-effect transistors with high-quality and uniform single-layer graphene for high mobility

Gigahertz flexible graphene transistors for microwave integrated circuits

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Optimizing the fabrication process for high performance graphene field effect transistors.

Flexible field-effect transistors with a high on/off current ratio based on large-area single-crystal graphene

Embedded-gate Graphene Transistors for High-Mobility Detachable Flexible Nanoelectronics

High-frequency self-aligned graphene transistors with transferred gate stacks

Ultratransparent and Stretchable Graphene Electrodes

Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass.

High-k Boron Nitride Sheets/Polyimide Hybrid Dielectric Layers for the Fabrication of Flexible Organic Transistors on Commercial Graphite Paper