Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut-Off Frequency

High Mobility Flexible Graphene Field-Effect Transistors and Ambipolar Radio-Frequency Circuits

Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride

Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates

Flexible Graphene Field-Effect Transistors with Extrinsic ${f}_{{{\mathrm{max}}}}$ of 28 GHz

Flexible graphene field effect transistor with ferroelectric polymer gate

Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

State-of-the-art graphene transistors on hexagonal boron nitride, high-k, and polymeric films for GHz flexible analog nanoelectronics

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

Flexible field-effect transistors with a high on/off current ratio based on large-area single-crystal graphene

Gigahertz flexible graphene transistors for microwave integrated circuits

High-frequency self-aligned graphene transistors with transferred gate stacks

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Graphene FET on Diamond for High-Frequency Electronics

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass.

Graphene-based ambipolar electronics for radio frequency applications

Vertically architectured stack of multiple graphene field-effect transistors for flexible electronics.

Optimizing the fabrication process for high performance graphene field effect transistors.

An Embedded Gate Graphene Field Effect Transistor with Natural Al Oxidization Dielectrics and Its Application to Frequency Doubler