Abstract:A triboelectric potential powered vertical field‐effect transistor (tribotronic vertical field‐effect transistor or graphene barristor) is demonstrated, offering an effective way to modulate the Schottky barrier of vertical van der Waals heterostructure by mechanical displacement. Graphene has attracted considerable interest for next‐generation electronics. However, the absence of natural bandgap has limited the current on/off ratio of graphene‐based transistors. Vertical integration of 2D heterostructures offers a promising approach to address this challenge, enabling high‐current‐density vertical field‐effect transistor (VFET) with large on/off ratio. Here, a triboelectric potential‐powered VFET with a vertical stacked graphene/MoS2 heterostructure and a sliding‐mode triboelectric nanogenerator (TENG) coupled with gate dielectrics are proposed. The tribotronic VFET has an ultrashort channel length in vertical direction, exhibiting excellent current driving capability with an ultrahigh on‐state current density of 950 A cm−2 and a good current on/off ratio of 630. It also demonstrates reconfigurable diode behavior with a rectification ratio over 102. Temperature‐dependent studies are applied to tribotronic devices for the first time, indicating an effective modulation on the Schottky barrier height of 150 meV by the triboelectric potential. A green LED pixel is driven by the tribotronic VFET as a demonstration to work as a tactile interactive light‐emitting device. The demonstrated tribotronic vertical device offers a promising strategy for integrating various 2D layered materials with TENG in vertical direction, enabling 3D integration of low‐power and interactive devices for next‐generation electronics.

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