Abstract:We have provided the first demonstration of high-performance top-gate indium-tin-oxide (ITO) radio-frequency (RF) transistors. The top-gate ITO transistors on SiC substrate with optimized high-κ atomic layer deposition (ALD) grown HfLaO exhibit significant improvement in not only output performance but also reliability including positive bias temperature instability (PBTI) and hot carrier degradation (HCD) at both room temperature and 85 °C. Top-gate ITO transistor on SiC substrate with high thermal conductivity shows a clear advantage in mitigating hot carrier effect, especially at high drive current for short-channel transistors. The 100 nm channel transistor shows negligible HCD, where the changes of output current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf> ) and transconductance (g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> ) are less than 5% at 85 °C, a 5 times reduction from that on SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /Si substrate. Finally, the shortest 60 nm channel ITO transistor on SiC substrate exhibits record-high output current I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf> of 2.32 mΑ/μm and g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> of 900 μS/μm at drain bias of 1 V at 85 °C. Furthermore, the RF ITO transistors on SiC substrates have achieved record high f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> up to 48 GHz, the highest among all amorphous oxide semiconductor (AOS) transistors.

High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

High-stability Flexible Radio Frequency Transistor and Mixer Based on Ultrathin Indium Tin Oxide Channel

Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress

Rf Characterization of Gigahertz Flexible Silicon Thin-Film Transistor on Plastic Substrates under Bending Conditions

First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, I<inf>d</inf> of 2.32 mA/μm and g<inf>m</inf> of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C

First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, Id of 2.32 Ma/μm and Gm of 900 Μs/μm on SiC Substrate with Superior Reliability at 85 °C

High Mobility Flexible Graphene Field-Effect Transistors and Ambipolar Radio-Frequency Circuits

Fast Flexible Transistors with a Nanotrench Structure

High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut-Off Frequency

High-Performance CVD Bilayer MoS2 Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics

High-Performance CVD Bilayer MoS<sub>2</sub> Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

Sub-180-nanometer-thick ultraconformable high-performance carbon nanotube-based dual-gate transistors and differential amplifiers

Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates

Ultra flexible pseudo-lamb wave RF resonators based on ZnO/PI and AlN/PI structures

Flexible structured high-frequency film bulk acoustic resonator for flexible wireless electronics

Gigahertz flexible graphene transistors for microwave integrated circuits

Flexible Nanoscale Amorphous Oxide Transistors with a Gold-Assisted Transfer Method

Nanometre-thin Indium Tin Oxide for Advanced High-Performance Electronics

High‐mobility Flexible Thin‐film Transistors with a Low‐temperature Zirconium‐doped Indium Oxide Channel Layer

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz.