Abstract:We have provided the first demonstration of high-performance top-gate indium-tin-oxide (ITO) radio-frequency (RF) transistors. The top-gate ITO transistors on SiC substrate with optimized high-κ atomic layer deposition (ALD) grown HfLaO exhibit significant improvement in not only output performance but also reliability including positive bias temperature instability (PBTI) and hot carrier degradation (HCD) at both room temperature and 85 °C. Top-gate ITO transistor on SiC substrate with high thermal conductivity shows a clear advantage in mitigating hot carrier effect, especially at high drive current for short-channel transistors. The 100 nm channel transistor shows negligible HCD, where the changes of output current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf> ) and transconductance (g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> ) are less than 5% at 85 °C, a 5 times reduction from that on SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /Si substrate. Finally, the shortest 60 nm channel ITO transistor on SiC substrate exhibits record-high output current I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf> of 2.32 mΑ/μm and g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> of 900 μS/μm at drain bias of 1 V at 85 °C. Furthermore, the RF ITO transistors on SiC substrates have achieved record high f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> up to 48 GHz, the highest among all amorphous oxide semiconductor (AOS) transistors.

First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, I<inf>d</inf> of 2.32 mA/μm and g<inf>m</inf> of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C

First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, Id of 2.32 Ma/μm and Gm of 900 Μs/μm on SiC Substrate with Superior Reliability at 85 °C

High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric

10-nm Channel Length Indium-Tin-Oxide transistors with I-on=1860 mu A/mu m, G(m)=1050 mu S/mu m at V-ds=1 V with BEOL Compatibility

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

10-nm Channel Length Indium-Tin-Oxide transistors with I on = 1860 μA/μm, G m = 1050 μS/μm at V ds = 1 V with BEOL Compatibility

Heterointegrated Ga<sub>2</sub>O<sub>3</sub>-on-SiC RF MOSFETs With <i>f</i><sub>T</sub>/<i>f</i><sub>max</sub> of 47/51 GHz by Ion-Cutting Process

High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

Heterointegrated Ga2O3-on-SiC RF MOSFETs with F T/f Max of 47/51 GHz by Ion-Cutting Process

Beol Compatible 15-Nm Channel Length Ultrathin Indium-Tin-Oxide Transistors With I-On=970 Mu A/Mu M And On/Off Ratio Near 10(11) At V-Ds=0.5 V

BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with I on = 970 μA/μm and On/off Ratio Near 10 11 at V ds = 0.5 V

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with I<inf>on</inf> = 970 μA/μm and On/off Ratio Near 10<sup>11</sup> at V<inf>ds</inf> = 0.5 V

High-Performance InGaAs HEMTs on Si Substrates for RF Applications

Nanometre-thin Indium Tin Oxide for Advanced High-Performance Electronics

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz.

First Demonstration of Sequential Integration for Stacked Gate-All-Around a-IGZO Nanosheet Transistors with Record I<inf>d</inf> = 2.05 mA/µm, g<inf>m</inf> = 1.13 mS/µm and Ultralow SS = 66 mV/dec

High-stability Flexible Radio Frequency Transistor and Mixer Based on Ultrathin Indium Tin Oxide Channel

Terahertz metal-oxide-semiconductor transistors based on aligned carbon nanotube arrays

High-frequency Performance In 0

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration