High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

Mengwei Si,Zehao Lin,Zhizhong Chen,Peide D. Ye

DOI: https://doi.org/10.1109/TED.2021.3106282

IF: 3.1

2021-01-01

IEEE Transactions on Electron Devices

Abstract:In this work, we report the experimental demonstration of In2O3 3-D transistors coated on fin structures and integrated circuits by a back-end-of-line (BEOL) compatible atomic layer deposition (ALD) process. High-performance planar back-gate In2O3 transistors with high mobility of 113 cm(2)/V.s and high maximum drain current (I-D) of 2.5 mA/mu m are achieved by channel thickness engineering and postdeposition annealing. The high-performance ALD In2O3-based zero-V-GS-load inverter is demonstrated with a maximum voltage gain of 38 V/V and a minimum supply voltage (V-DD) down to 0.5 V. Top-gate indium oxide (In2O3) transistors by low-temperature ALD of both gate insulator and channel semiconductor are also demonstrated with I-D of 570 mu A/mu m and low subthreshold slope (SS) down to 84.6 mV/decade. ALD In2O3 3-D Fin transistors with the top-gate structure are then demonstrated, benefiting from the conformal deposition capability of ALD. These results suggest that ALD oxide semiconductors and devices have unique advantages and are promising toward BEOL-compatible monolithic 3-D integration for 3-D integrated circuits.