Abstract:In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controllable thickness of In2O3 at atomic scale enables the design of sufficient 2D carrier density in the In2O3 channel integrated with the conventional dielectric. The threshold voltage and channel carrier density are found to be considerably tuned by channel thickness. Such phenomenon is understood by the trap neutral level (TNL) model where the Fermi-level tends to align deeply inside the conduction band of In2O3 and can be modulated to the bandgap in atomic layer thin In2O3 due to quantum confinement effect, which is confirmed by density function theory (DFT) calculation. The demonstration of enhancement-mode amorphous In2O3 transistors suggests In2O3 is a competitive channel material for back-end-of-line (BEOL) compatible transistors and monolithic 3D integration applications.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is: how to realize indium oxide (In₂O₃) thin - film transistors with a thickness of only 0.7 nanometers through atomic layer deposition (ALD) technology and overcome two major challenges of traditional indium oxide materials in thin - film transistor (TFT) applications. ### 1. Background and Challenges Traditional indium oxide materials face two main problems in TFT technology: 1. **Electrical performance instability caused by polycrystalline structure**: Indium oxide thin films prepared by sputtering methods are usually polycrystalline, which will lead to the existence of grain boundaries and thus make their electrical performance unstable. 2. **High electron density is difficult to control**: Bulk indium oxide materials have a very high electron density (about \(10^{20} \, \text{cm}^{-3}\)), which makes it difficult to achieve enhancement - mode operation and thus cannot effectively suppress the off - state current (\(I_{\text{OFF}}\)). These problems limit the application of indium oxide as a channel material in display applications and back - end - of - line (BEOL) - compatible transistors. ### 2. Solutions The authors prepared amorphous indium oxide thin films with a thickness as low as 0.7 nanometers through atomic layer deposition (ALD) technology. This method solves the above two problems: - **Amorphous structure**: The ultrathin indium oxide thin films grown by ALD are amorphous, avoiding the electrical performance instability brought by the polycrystalline structure. - **Reduction of two - dimensional carrier density**: The ultrathin indium oxide thin films significantly reduce the two - dimensional carrier density, achieving enhancement - mode operation, and thus can effectively suppress the off - state current. ### 3. Key Findings The authors found that the thickness of indium oxide thin films is crucial to their material properties and electron transport properties. Specifically: - **Threshold voltage (\(V_T\)) and channel carrier density** can be significantly regulated by adjusting the thickness of indium oxide thin films. - **Quantum confinement effect**: When the thickness of indium oxide thin films is reduced to the nanoscale, the Fermi level tends to be deeply embedded in the conduction band and can be modulated into the bandgap through the quantum confinement effect. This has been verified by density functional theory (DFT) calculations. ### 4. Application Prospects This research shows the potential of enhancement - mode amorphous indium oxide transistors in display applications and BEOL - compatible transistors. In particular, indium oxide thin films grown by ALD have the following advantages: - **Uniform deposition**: They can be uniformly deposited on large - size wafers. - **Low dielectric constant**: The relatively low dielectric constant (8.9) helps to improve the gate electrostatic control ability. - **Low - temperature process**: It is suitable for the low - temperature treatment (225°C) of BEOL processes. In summary, this paper successfully prepared ultrathin indium oxide thin - film transistors through ALD technology, solved the key problems of traditional indium oxide materials in TFT applications, and showed their application potential in high - performance transistors.

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