Abstract:In this work, we demonstrate enhancement-mode field-effect transistors by an atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controllable thickness of In2O3 at atomic scale enables the design of sufficient 2D carrier density in the In2O3 channel integrated with the conventional dielectric. The threshold voltage and channel carrier density are found to be considerably tuned by channel thickness. Such a phenomenon is understood by the trap neutral level (TNL) model, where the Fermi-level tends to align deeply inside the conduction band of In2O3 and can be modulated to the bandgap in atomic layer thin In2O3 due to the quantum confinement effect, which is confirmed by density function theory (DFT) calculation. The demonstration of enhancement-mode amorphous In2O3 transistors suggests In2O3 is a competitive channel material for back-end-of-line (BEOL) compatible transistors and monolithic 3D integration applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c03967?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c03967</a>.Additional details for TLM measurements on thick In2O3 film, the impact of TNL alignments, and an analytical quantum confinement model (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c03967/suppl_file/nl0c03967_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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