Abstract:In this work, we report on back-end-of-line (BEOL)-compatible InGaZnO indium gallium zinc oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including channel thickness ( $\textit{T}_{\text{ch}}\text{)}$ down to 1.5 nm and channel length ( $\textit{L}_{\text{ch}}\text{)}$ down to 60 nm. These IGZO channels with a high In atomic ratio of 92% were derived by atomic-layer-deposition (ALD), where the IGZO thickness could be precisely controlled by ALD cycles. These TFTs were subjected to a mild O $_{\text{2}}$ annealing at 250 $^{\circ}$ C, the effect of which is also systematically investigated. It is found that both $\textit{T}_{\text{ch}}$ and O $_{\text{2}}$ annealing have significant effects on TFT performance. By using optimized O $_{\text{2}}$ annealing conditions, the ALD IGZO TFTs with scaled $\textit{T}_{\text{ch}}$ of 1.5 nm and $\textit{L}_{\text{ch}}$ of 60 nm exhibit desirable electrical performance including a high ON/OFF ratio ( $\textit{I}_{\biosc{on}}$ / $\textit{I}_{\biosc{off}}\text{)}$ $\sim$ 10 $^{\text{11}}$ , a decent high Ion of 354 $\mu$ A/ $\mu$ m under $\textit{V}_{\text{DS}}$ of 1.2 V, a steep subthreshold swing (SS) of 68 mV/dec, a small drain-induced-barrier-lowering (DIBL) of 30 mV/V, and a normal-off operation, which is comparable to the state-of-art sputtered IGZO TFTs. Furthermore, the optimized TFTs also exhibit significantly resolved threshold voltage ( $\textit{V}_{\text{T}}\text{)}$ roll-off and a remarkably high degree of stability to the positive gate bias stress (PBS). A trap model with its possible microscopic origin is proposed, which explains well the dependence of electrical performance on both $\textit{T}_{\text{ch}}$ and O $_{\text{2}}$ annealing, thus providing a new insight into the reliability of IGZO TFTs.

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of Channel

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)

BEOL Compatible Ultra-Thin ITO Transistor with Performance Recoverable Capability by in Situ Electrothermal Annealing

First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Ultrathin In2O3 Thin-Film Transistors Deposited from Trimethylindium and Ozone

Back-End-of-Line Compatible InSnO/ZnO Heterojunction Thin-Film Transistors With High Mobility and Excellent Stability

Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor With TiO2 Interfacial Layer

Ultrathin In2O3thin-film transistors deposited from trimethylindium and ozone

Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility