Abstract:In this study, we propose, fabricate, and examine the electrical characteristics of high-performance channel-engineered amorphous aluminum-doped zinc tin oxide (a-AZTO) thin-film transistors (TFTs). Amorphous indium gallium zinc oxide (a-IGZO) film with improved conductivity (obtained via rapid thermal annealing in vacuum) is applied as the local conductive buried layer (LCBL) of the channel-engineered a-AZTO TFTs. The optical transmittance of the a-IGZO and a-AZTO films in the visible region is >85%. The a-IGZO LCBL reduces the resistance of the a-AZTO channel, thereby resulting in increased drain current and improved device performance. We find that our fabricated channel-engineered a-AZTO TFTs with LCBLs are superior to non-channel-engineered a-AZTO TFTs without LCBLs in terms of electrical properties such as the threshold voltage, mobility, subthreshold swing, and on-off current ratios. In particular, as the a-IGZO LCBL length at the bottom of the channel increases, the channel resistance gradually decreases, eventually resulting in a mobility of 22.8 cm²/V · s, subthreshold swing of 470 mV/dec, and on-off current ratio of 3.98×107. We also investigate the effect of the a-IGZO LCBL on the operational reliability of a-AZTO TFTs by measuring the variation in the threshold voltage for positive gate bias temperature stress (PBTS), negative gate bias temperature stress (NBTS), and negative gate bias temperature illumination stress (NBTIS). The results indicate that the TFT instability for temperature and light is not affected by the LCBL. Therefore, our proposed channel-engineered a-AZTO TFT can form a promising high-performance high-reliability switching device for next-generation displays.

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MILC Thin Film Transistor with Ultra-Thin Channel

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

Characterization of the MIC/MILC Interface and Its Effects on the Performance of MILC Thin-Film Transistors

Effects of Longitudinal Grain Boundaries on the Performance of MILC-TFTs

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

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High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

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Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

Impacts of Vertically Stacked Monolithic 3D-IC Process on Characteristics of Underlying Thin-Film Transistor

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel

Fabrication of High Performance Low-Temperature Poly-Si Thin-Film Transistors Using A Modulated Process

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Performance Improvement of Low-Temperature Polycrystalline Silicon Thin-Film Transistors with Fluorinated Silicate Glass Drive-In Masking Layer

Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing

High-performance nano-scale InSnO transistors

Low Thermal Budget Poly-Si Thin Film Transistors on Glass

Improving Switching Performance of Thin-Film Transistors in Disordered Silicon