Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O<sub>2</sub> due to the reduction in traps at ZnO/SiO<sub>2</sub> interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors Fabricated On Plastic Substrates At Low Temperature

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C

Fully-transparent Mo-doped ZnO TFTs fabricated in different oxygen partial pressure at low temperature

High–performance Fully–transparent Ni–doped ZnO Thin–film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

Fully transparent al-doped ZnO thin-film transistors on flexible plastic substrates

Al-Doped Zno Thin-Film Transistors on Flexible Plastic Substrate

High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

P‐15: High‐Performance Fully Transparent Hafnium‐Doped Zinc Oxide TFTs Fabricated at Low Temperature

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature.

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates with a Maximum Process Temperature of 100 °C

Room-temperature fabrication of flexible gallium-doped zinc oxide thin-film transistors on plastic substrates

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

High-performance Ti-doped zinc oxide TFTs with double-layer gate dielectric fabricated at low temperature