Abstract:We have fabricated Al-doped ZnO thin-film transistors (AZO TFT) on plastic substrate at room temperature. The effect of O-2/Ar ratio during channel deposition is investigated on the electrical properties of the Al-doped ZnO thin-film transistors (TFTs) on plastic substrates at room temperature. As the O-2/Ar ratio increases, the threshold voltage increases monotonously while the saturation mobility and the subthreshold swing show a non-monotonic change, reaching a maximum and a minimum respectively when the ratio of O-2 is 5%. And it's further demonstrated that TFTs with as-deposited AZO films (5%O-2) exhibit the best electrical properties, with an on/off current ratio of 10(6), an off current in the order of 10(-11)A, a threshold voltage about 1.06 V, a subthreshold swing of about 0.76 V/dec, and a saturation mobility of about 47.76 cm(2)V(-1)s(-1). Compared to the AZO film with 100% Ar during the radio-frequency (RF) sputtering deposition, the grain size of AZO films abruptly decreases to a few nanometers as O-2 is added(5% O-2), and then becomes almost unchanged with the further increase of pO(2) (10% O-2 and 20% O-2). The resistivity experiences a substantial increase correspondingly. The results show that Al-doped ZnO is a promising candidate for the channel material of high performance flexible TFTs.

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22.2: The influence of Oxygen Partial Pressure on the Performance of back‐channel‐etched a‐ZTO Thin‐Film Transistors